| Presentation | 2014-12-12 Low-Temperature CLC Poly-Si TFTs with Sputtered HfO_2 Gate Dielectric Layer Tatsuya MEGGURO, Akito HARA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To achieve high performance low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), high-k gate dielectric of sputtered HfO_2 was combined with high-quality lateral large-grained poly-Si thin film fabricated by continuous-wave laser lateral crystallization (CLC). The CET obtained from split CV method indicates 11 nm and HfO_2 gate dielectric shows dielectric constant of 15. Field-effect mobility and S.S. of fabricated CLC LT poly-Si TFTs are 160 cm^2/Vs and 200 mV/dec, respectively. Furthermore, drain current of the TFT was about 4 times higher than that of TFT with SiO_2 gate dielectric. This result demonstrates feasibility of high-k CLC LT poly-Si TFTs |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Thin film transistor / Low-temperature poly-Si TFT / Laser crystallization / SiO_2 / Al_2O_3 / HfO_2 |
| Paper # | EID2014-23,SDM2014-118 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2014/12/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-Temperature CLC Poly-Si TFTs with Sputtered HfO_2 Gate Dielectric Layer |
| Sub Title (in English) | |
| Keyword(1) | Thin film transistor |
| Keyword(2) | Low-temperature poly-Si TFT |
| Keyword(3) | Laser crystallization |
| Keyword(4) | SiO_2 |
| Keyword(5) | Al_2O_3 |
| Keyword(6) | HfO_2 |
| 1st Author's Name | Tatsuya MEGGURO |
| 1st Author's Affiliation | Faculty of Engineering, Tohoku-Gakuin University() |
| 2nd Author's Name | Akito HARA |
| 2nd Author's Affiliation | Faculty of Engineering, Tohoku-Gakuin University |
| Date | 2014-12-12 |
| Paper # | EID2014-23,SDM2014-118 |
| Volume (vol) | vol.114 |
| Number (no) | 359 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |