Presentation 2014-12-12
Photoelectric conversion function analysis of the silicon solar module using electroluminescence(EL) emission intensity
Tsuyoshi TOMIMOTO, Shota TSUZUKI, Ayumi TANI,
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Abstract(in English) Electroluminescence imaging method (EL method) is extensively investigated since crystal defects and process induced faults can be easily detected photographically. EL imaging method can evaluate intrinsic and extrinsic defects qualitatively by temperature dependence. In this work we reveal the correlation between EL emission intensity and the parameter of open circuit voltage using reference module. We will present the quantitative analysis method of photoelectric conversion function of Si solar modules.
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Keyword(in English) Crystalline silicon solar cells / Electroluminescence imaging method / EL intensity / Open circuit voltage
Paper # EID2014-18,SDM2014-113
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Committee EID
Conference Date 2014/12/5(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Photoelectric conversion function analysis of the silicon solar module using electroluminescence(EL) emission intensity
Sub Title (in English)
Keyword(1) Crystalline silicon solar cells
Keyword(2) Electroluminescence imaging method
Keyword(3) EL intensity
Keyword(4) Open circuit voltage
1st Author's Name Tsuyoshi TOMIMOTO
1st Author's Affiliation Graduate School of Materials Science, Nara Institute of Science and Technology()
2nd Author's Name Shota TSUZUKI
2nd Author's Affiliation Graduate School of Materials Science, Nara Institute of Science and Technology
3rd Author's Name Ayumi TANI
3rd Author's Affiliation Graduate School of Materials Science, Nara Institute of Science and Technology
Date 2014-12-12
Paper # EID2014-18,SDM2014-113
Volume (vol) vol.114
Number (no) 359
Page pp.pp.-
#Pages 5
Date of Issue