Presentation 2014-12-12
Conduction mechanism and Charge retention mechanism for DNA memory transistor
Shouhei Nakamura, Naoto MATSUO, Akira HEYA, Kazushige YAMANA, Tadao TAKADA, Masataka FUKUYAMA, Shin YOKOYAMA,
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Abstract(in English) The carrier behavior in DNA was examined using the DNA channel/SiO_2/Si gate structure, hi this case, electrodes with a gap of 120 nm using a substrate Si was prepared and DNA was fixed between the electrodes. The dI_D/dV_D shows the maximum value at the drain voltage of 0.7 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they were detrapped by the electric field in the channel. In the case of p^+Si, the holes of majority earners are emitted from the drain electrodes by recombination of electrons and holes in the DNA channel thought the mass action law.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) DNA / FET / Si / Trap / Detrap / Carrier / Charge retention property
Paper # EID2014-16,SDM2014-111
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Committee EID
Conference Date 2014/12/5(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Conduction mechanism and Charge retention mechanism for DNA memory transistor
Sub Title (in English)
Keyword(1) DNA
Keyword(2) FET
Keyword(3) Si
Keyword(4) Trap
Keyword(5) Detrap
Keyword(6) Carrier
Keyword(7) Charge retention property
1st Author's Name Shouhei Nakamura
1st Author's Affiliation University of Hyogo()
2nd Author's Name Naoto MATSUO
2nd Author's Affiliation University of Hyogo
3rd Author's Name Akira HEYA
3rd Author's Affiliation University of Hyogo
4th Author's Name Kazushige YAMANA
4th Author's Affiliation University of Hyogo
5th Author's Name Tadao TAKADA
5th Author's Affiliation University of Hyogo
6th Author's Name Masataka FUKUYAMA
6th Author's Affiliation Research Institute for Nanodevice and Bio Systems, Hiroshima University
7th Author's Name Shin YOKOYAMA
7th Author's Affiliation Research Institute for Nanodevice and Bio Systems, Hiroshima University
Date 2014-12-12
Paper # EID2014-16,SDM2014-111
Volume (vol) vol.114
Number (no) 359
Page pp.pp.-
#Pages 4
Date of Issue