| Presentation | 2014-12-12 Activation of B^+ or B_<10>H_<14>^+ Implanted Silicon by Soft X-ray Irradiation Akira HEYA, Fumito KUSAKABE, Shota HIRANO, Naoto MATSUO, Kazuhiro KANDA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | To realize a ultrathin junction with 10 nm depth, a novel activation method of B dopant using soft X-ray undulator was examined. In this study, B ion cluster (B_<10>H_<14>^+) was used as B source. The sheet resistance of Si treated soft X-ray irradiation was low compared with a conventional thermal annealing. The effect of soft X-ray irradiation on B activation was remarkable below 500℃. The atomic movement of Si atoms was enhanced by ionization and local phonon composition. The crystallinity of Si was recovered and the substitution of B atom into Si lattice site is occurred via knock-on effect. The low sheet resistance can be achieved by using B_<10>H_<14>^+ instead of B^+. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Soft X-ray source / Boron cluster / Low-temperature activation / Silicon / Electron excitation / Atomic movement |
| Paper # | EID2014-15,SDM2014-110 |
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| Conference Information | |
| Committee | EID |
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| Conference Date | 2014/12/5(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Electronic Information Displays (EID) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Activation of B^+ or B_<10>H_<14>^+ Implanted Silicon by Soft X-ray Irradiation |
| Sub Title (in English) | |
| Keyword(1) | Soft X-ray source |
| Keyword(2) | Boron cluster |
| Keyword(3) | Low-temperature activation |
| Keyword(4) | Silicon |
| Keyword(5) | Electron excitation |
| Keyword(6) | Atomic movement |
| 1st Author's Name | Akira HEYA |
| 1st Author's Affiliation | Department of Materials Science and Chemistry, University of Hyogo() |
| 2nd Author's Name | Fumito KUSAKABE |
| 2nd Author's Affiliation | Department of Materials Science and Chemistry, University of Hyogo |
| 3rd Author's Name | Shota HIRANO |
| 3rd Author's Affiliation | Department of Materials Science and Chemistry, University of Hyogo |
| 4th Author's Name | Naoto MATSUO |
| 4th Author's Affiliation | Department of Materials Science and Chemistry, University of Hyogo |
| 5th Author's Name | Kazuhiro KANDA |
| 5th Author's Affiliation | Laboratory of Advanced Science and Technology for Industry (LASTI), University of Hyogo |
| Date | 2014-12-12 |
| Paper # | EID2014-15,SDM2014-110 |
| Volume (vol) | vol.114 |
| Number (no) | 359 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |