Presentation	2014-12-12 Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs Hiroaki FUJIHARA, Naoya MORIOKA, Hajime TANAKA, Jun SUDA, Tsunenobu KIMOTO,
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Abstract(in English)	We fabricated <100>, <110>, <111>, and <112> p-channel Gate-Ail-Around Si nanowire (SiNW) MOSFETs with rectangular cross sections with various width, and investigated the hole mobility of the SiNW MOSFETs using the double Lm method. Measured hole mobilities of SiNW MOSFETs were about 80-140 cm^2/Vs at n_ = 1 × 10^<13> cm^<-2>. The dependences of the hole mobility on orientations and cross-sectional shapes of nanowires were clarified. The orientation and geometry dependences can be explained by the band structures calculated by tight-binding approximation and the contribution to conduction from the four periphery surfaces around the NW.
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Keyword(in English)	Si Nanowire / MOSFET / Hole Mobility / Effective Mass
Paper #	EID2014-14,SDM2014-109
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Committee	EID
Conference Date	2014/12/5(1days)
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Registration To	Electronic Information Displays (EID)
Language	JPN
Title (in Japanese)	(See Japanese page)
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Title (in English)	Impacts of Orientation and Cross-sectional Shape on Mobility of P-channel Si Nanowire MOSFETs
Sub Title (in English)
Keyword(1)	Si Nanowire
Keyword(2)	MOSFET
Keyword(3)	Hole Mobility
Keyword(4)	Effective Mass
1st Author's Name	Hiroaki FUJIHARA
1st Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University()
2nd Author's Name	Naoya MORIOKA
2nd Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University
3rd Author's Name	Hajime TANAKA
3rd Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University
4th Author's Name	Jun SUDA
4th Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University
5th Author's Name	Tsunenobu KIMOTO
5th Author's Affiliation	Department of Electronic Science and Engineering, Kyoto University
Date	2014-12-12
Paper #	EID2014-14,SDM2014-109
Volume (vol)	vol.114
Number (no)	359
Page	pp.pp.-
#Pages	5
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