Presentation 2014-12-12
Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime TANAKA, Seigo MORI, Naoya MORIOKA, Jun SUDA, Tsunenobu KIMOTO,
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Abstract(in English) We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic methods, a tight-binding approximation and a valence force field model, and investigated the impacts of the orientations and cross-sectional shapes of nanowires on the hole mobility. By analyzing the geometry dependence of mobility based on the valence band structure of Ge nanowires, we showed that the geometry dependence of mobility is understandable by an average effective mass and the density of states of holes. Among the geometries investigated in this study, [110]-oriented nanowires with larger cross-sectional height along the [001] direction showed the highest hole mobility, which indicates that such nanowires are promising as the channel material of p-MOSFETs.
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Keyword(in English) Ge Nanowire / Hole Mobility / Phonon Scattering / Tight-Binding Approximation / Valence Force Field Model
Paper # EID2014-13,SDM2014-108
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Committee EID
Conference Date 2014/12/5(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires
Sub Title (in English)
Keyword(1) Ge Nanowire
Keyword(2) Hole Mobility
Keyword(3) Phonon Scattering
Keyword(4) Tight-Binding Approximation
Keyword(5) Valence Force Field Model
1st Author's Name Hajime TANAKA
1st Author's Affiliation Department of Electronic Science and Engineering, Kyoto University()
2nd Author's Name Seigo MORI
2nd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
3rd Author's Name Naoya MORIOKA
3rd Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
4th Author's Name Jun SUDA
4th Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
5th Author's Name Tsunenobu KIMOTO
5th Author's Affiliation Department of Electronic Science and Engineering, Kyoto University
Date 2014-12-12
Paper # EID2014-13,SDM2014-108
Volume (vol) vol.114
Number (no) 359
Page pp.pp.-
#Pages 6
Date of Issue