Presentation 2014-12-19
A Dual-Band High-Efficiency GaN HEMT Amplifier with Harmonic Reactive Terminations
Jun ENOMOTO, Ryo ISHIKAWA, Kazuhiko HONJO,
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Abstract(in English) High efficiency power amplifiers operating at multiple frequency bands are required for advanced mobile communication systems, which have multi-band capability. For a high-efficiency approach, we have proposed a harmonic reactive termination technique, in which harmonics are treated with the optimum pure reactance for a transistor. In this work, a dual-band GaN HEMT power amplifier with second harmonic reactive source and load impedances has been developed at 2.1-GHz and 2.6-GHz bands. The fabricated amplifier has achieved a high-efficiency operation with maximum power-added efficiencies of 72% and 61% and associated output powers of 36.7 dBm and 37.1 dBm at 2.13 and 2.6 GHz, respectively.
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Keyword(in English) microwave / power amplifier / dual-band / high efficiency / harmonics tuning
Paper # MW2014-166
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Committee MW
Conference Date 2014/12/11(1days)
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Registration To Microwaves (MW)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Dual-Band High-Efficiency GaN HEMT Amplifier with Harmonic Reactive Terminations
Sub Title (in English)
Keyword(1) microwave
Keyword(2) power amplifier
Keyword(3) dual-band
Keyword(4) high efficiency
Keyword(5) harmonics tuning
1st Author's Name Jun ENOMOTO
1st Author's Affiliation The University of Electro-Communications()
2nd Author's Name Ryo ISHIKAWA
2nd Author's Affiliation The University of Electro-Communications
3rd Author's Name Kazuhiko HONJO
3rd Author's Affiliation The University of Electro-Communications
Date 2014-12-19
Paper # MW2014-166
Volume (vol) vol.114
Number (no) 376
Page pp.pp.-
#Pages 6
Date of Issue