Presentation	2014-12-23 Modulation barrier AlGaAs/GaAs quantum cascade laser operating at 3.7 THz Tsung-Tse LIN, Hideki HIRAYAMA,
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Abstract(in English)	Recently one more design freedom of change the barriers height in THz QCLs is expected to improve device performance and combine different kind of advantage design simultaneously. Our aim is to achieve the thermoelectric cooling temperature operation THz QCLs combine with high Al composition structure with variable well-barrier height design. Here we present a primary experiment results by first arrange the recently recorded 3-wells resonant tunneling structure design with the reducing of the emission barrier height and adding an external thin barrier near the extraction barrier in the extraction/injection well. This modulation barrier THz QCLs succeeds lasing at 3.7 THz with the maximum operation temperature up to 112 K.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Terahertz / Quantum Cascade Laser
Paper #	ED2014-111
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Committee	ED
Conference Date	2014/12/15(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Modulation barrier AlGaAs/GaAs quantum cascade laser operating at 3.7 THz
Sub Title (in English)
Keyword(1)	Terahertz
Keyword(2)	Quantum Cascade Laser
1st Author's Name	Tsung-Tse LIN
1st Author's Affiliation	Terahertz Quantum Device Laboratory, RIKEN Sendai()
2nd Author's Name	Hideki HIRAYAMA
2nd Author's Affiliation	Terahertz Quantum Device Laboratory, RIKEN Sendai
Date	2014-12-23
Paper #	ED2014-111
Volume (vol)	vol.114
Number (no)	387
Page	pp.pp.-
#Pages	4
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