| Presentation | 2014-12-23 Improvement in sensitivity at 170 GHz of GaAsSb-based tunnel diodes by adjusting doping concentration Tsuyoshi TAKAHASHI, Masaru SATO, Yasuhiro NAKASHA, Shoichi SHIBA, Naoki HARA, Taisuke IWAI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Highly sensitive GaAsSb-based backward diodes were developed for millimeter-wave detection. The diodes consisted of p-GaAsSb/i-InAlAs/n-InGaAs heterojunction layers which were lattice matched to InP substrate. They can operate at room temperature and zero-bias condition. We achieved large sensitivity of 20,000 V/W was obtained at 94 GHz when doping concentration in the backward diodes was optimized. Furthermore, sensitivity over 2,000 V/W was obtained at 170 GHz by adopting planar doping in the n-InGaAs layer. We believe that extremely sensitive millimeter-wave receiver could be realized by integrating the backward diodes with InP-based HEMTs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Tunnel diode / Backward / Millimeter wave / Nonlinearity / GaAsSb / Zero bias / Detection / Sensitivity |
| Paper # | ED2014-108 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2014/12/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement in sensitivity at 170 GHz of GaAsSb-based tunnel diodes by adjusting doping concentration |
| Sub Title (in English) | |
| Keyword(1) | Tunnel diode |
| Keyword(2) | Backward |
| Keyword(3) | Millimeter wave |
| Keyword(4) | Nonlinearity |
| Keyword(5) | GaAsSb |
| Keyword(6) | Zero bias |
| Keyword(7) | Detection |
| Keyword(8) | Sensitivity |
| 1st Author's Name | Tsuyoshi TAKAHASHI |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd.:Fujitsu Limited() |
| 2nd Author's Name | Masaru SATO |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd.:Fujitsu Limited |
| 3rd Author's Name | Yasuhiro NAKASHA |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd.:Fujitsu Limited |
| 4th Author's Name | Shoichi SHIBA |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd.:Fujitsu Limited |
| 5th Author's Name | Naoki HARA |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd.:Fujitsu Limited |
| 6th Author's Name | Taisuke IWAI |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. |
| Date | 2014-12-23 |
| Paper # | ED2014-108 |
| Volume (vol) | vol.114 |
| Number (no) | 387 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |