Presentation 2014-11-28
Deep UV Light-emitting Diodes Containing a p-AlGaN Contacting Layer with High Al Content
Masafumi JO, Noritoshi MAEDA, Hideki HIRAYAMA,
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Abstract(in English) AlGaN light-emitting diodes (LEDs) have been extensively studied for highly efficient light sources in deep ultraviolet (UV) range. One of the central issues in deep UV LEDs is their low light extraction efficiency. A p-GaN contacting layer, which is widely used for blue-UV LEDs, absorbs the emitted light in deep-UV LEDs. As a result, it is difficult to extract the light from the surface, and the efficiency of the light extraction is limited up to 50%. Therefore, it is very important to develop a transparent p-AlGaN contacting layer in AlGaN LEDs. Here we report the fabrication of the LED containing a p-Al_<0.7>Ga_<0.3>N contacting layer. Nearly zero absorption in the p-contacting layer increased the light extraction efficiency with a reflective metal electrode.
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Keyword(in English) AlGaN / Deep UV LED / p-AlGaN contacting layer
Paper # ED2014-89,CPM2014-146,LQE2014-117
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Conference Information
Committee LQE
Conference Date 2014/11/20(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Deep UV Light-emitting Diodes Containing a p-AlGaN Contacting Layer with High Al Content
Sub Title (in English)
Keyword(1) AlGaN
Keyword(2) Deep UV LED
Keyword(3) p-AlGaN contacting layer
1st Author's Name Masafumi JO
1st Author's Affiliation RIKEN()
2nd Author's Name Noritoshi MAEDA
2nd Author's Affiliation RIKEN
3rd Author's Name Hideki HIRAYAMA
3rd Author's Affiliation RIKEN
Date 2014-11-28
Paper # ED2014-89,CPM2014-146,LQE2014-117
Volume (vol) vol.114
Number (no) 338
Page pp.pp.-
#Pages 4
Date of Issue