| Presentation | 2014-11-28 Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure Wataru TERASHIMA, Hideki HIRAYAMA, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | III-Nitride semiconductors having huge longitudinal optical phonon energies are promising as materials to solve a problem of "development of operational frequency range (5-12 THz)" on terahertz quantum cascade lasers (THz-QCLs). In this study, for the purpose of realization of THz emission/lasing due to optical transition between target subband levels, we designed and fabricated a simple quantum cascade (QC) structure with a diagonal optical transition scheme whose active region consisted of 2QWs per one-period that minimized the number of laser levels. We successfully for the first time observed lasing action emitting at the same frequency (5.5 THz) as the target one from a GaN-based THz-QCL device. We also successfully opened up new frequency region on THz-QCLs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum cascade laser / Terahertz / III-Nitride semiconductors / Lasing |
| Paper # | ED2014-85,CPM2014-142,LQE2014-113 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2014/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure |
| Sub Title (in English) | |
| Keyword(1) | Quantum cascade laser |
| Keyword(2) | Terahertz |
| Keyword(3) | III-Nitride semiconductors |
| Keyword(4) | Lasing |
| 1st Author's Name | Wataru TERASHIMA |
| 1st Author's Affiliation | RIKEN() |
| 2nd Author's Name | Hideki HIRAYAMA |
| 2nd Author's Affiliation | RIKEN |
| Date | 2014-11-28 |
| Paper # | ED2014-85,CPM2014-142,LQE2014-113 |
| Volume (vol) | vol.114 |
| Number (no) | 338 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |