| Presentation | 2014-11-28 MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7THz Shiro TOYODA, Wataru TERASHIMA, Norihiko KAMATA, Hideki HIRAYAMA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Terahertz quantum cascade lasers (THz-QCLs) are attracting attention for use as a lot of applications, because they are quite compact THz light sources which can achieve high output power, narrow line-width and continuous wave (C.W.) operation. GaN-based semiconductors which have huge longitudinal optical phonon energies are expected as materials to solve both problems of "Development of operational frequency range (5-12 THz)" and "Increase of operational temperature (>300 K)" on THz-QCLs. In this study, we grew GaN-based THz-QCL structures by using a metal organic chemical vapor deposition (MOCVD) and investigated their structural and optical properties. We found that the QC structure fabricated by the MOCVD has advantage over mosaic and threading dislocation density characteristics in comparison with those of the QC structure fabricated by a molecular beam epitaxy. We successfully realized lasing action at the unexplored frequency of 7 THz from a GaN-based THz-QCL. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / THz / QCL / III-Nitride semiconductors |
| Paper # | ED2014-84,CPM2014-141,LQE2014-112 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2014/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7THz |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | THz |
| Keyword(3) | QCL |
| Keyword(4) | III-Nitride semiconductors |
| 1st Author's Name | Shiro TOYODA |
| 1st Author's Affiliation | RIKEN:Saitama University() |
| 2nd Author's Name | Wataru TERASHIMA |
| 2nd Author's Affiliation | RIKEN |
| 3rd Author's Name | Norihiko KAMATA |
| 3rd Author's Affiliation | Saitama University |
| 4th Author's Name | Hideki HIRAYAMA |
| 4th Author's Affiliation | RIKEN:Saitama University |
| Date | 2014-11-28 |
| Paper # | ED2014-84,CPM2014-141,LQE2014-112 |
| Volume (vol) | vol.114 |
| Number (no) | 338 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |