Presentation 2014-11-28
Fabrication of single crystalline p-i-n nanocolumns array on a sputter-deposited thin film
Tomohiro NOMA, Hiroaki HAYASHI, Daishi FUKUSHIMA, Yuta KONNO, Ichirou NOMURA, Katsumi KISHINO,
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Abstract(in English) Nitride has an attractive feature of bandgap engineering from ultraviolet to infrared. However, a lot of defects in nitride inhibit the feature. In this study, we demonstrated nitride nanocolumn on Si wafer that is expected realization of large-scale/low-cost devices. Furthermore, nanocolumn structure is expected to suppress propagation of dislocation. We employed a sputter-deposited AlN nucleation layer, because it is so difficult to grow nitride crystal on Si wafer. We successfully fabricated a single crystalline GaN nanocolumns array even on the sputter-deposited film containing high-density dislocations. Single-peak PL emission in wide visible range from integrated InGaN/GaN MQW, and control of PL peak wavelength by pre-patterning were also demonstrated.
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Keyword(in English) Nanocolumn / Si wafer / Sputter-deposited AlN
Paper # ED2014-97,CPM2014-154,LQE2014-125
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Committee ED
Conference Date 2014/11/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Fabrication of single crystalline p-i-n nanocolumns array on a sputter-deposited thin film
Sub Title (in English)
Keyword(1) Nanocolumn
Keyword(2) Si wafer
Keyword(3) Sputter-deposited AlN
1st Author's Name Tomohiro NOMA
1st Author's Affiliation Sophia university()
2nd Author's Name Hiroaki HAYASHI
2nd Author's Affiliation Sophia university
3rd Author's Name Daishi FUKUSHIMA
3rd Author's Affiliation Sophia university
4th Author's Name Yuta KONNO
4th Author's Affiliation Sophia university
5th Author's Name Ichirou NOMURA
5th Author's Affiliation Sophia university
6th Author's Name Katsumi KISHINO
6th Author's Affiliation Sophia university
Date 2014-11-28
Paper # ED2014-97,CPM2014-154,LQE2014-125
Volume (vol) vol.114
Number (no) 336
Page pp.pp.-
#Pages 4
Date of Issue