Presentation 2014-11-28
Effects of thermal cleaning on surface of bulk GaN substrates
S. OKADA, H. MIYAKE, K. HIRAMATSU, R. MIYAGAWA, O. ERYU, T. HASHIZUME,
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Abstract(in English) Thermal cleaning at high temperature from 800℃ to 1100℃ of free-standing polar (0001) plane and non-polar (10-10) (20-21) (20-2-1) plane GaN substrates was demonstrated, and the change of surface morphologies were shown. In the case of polar (0001) plane, polishing scratches on the surface decreased with increased thermal cleaning temperature, and atomic step was appeared at 1000℃. At 1100℃, desorption of surface occurred and surface morphologies became rough. In the case of non-polar GaN substrates, surface morphologies after thermal cleaning were markedly different based on orientation of surface. Surface roughness of (20-21) plane GaN drastically deteriorated with increasing thermal cleaning temperature.
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Keyword(in English) GaN / thermal cleaning / free-standing substrate
Paper # ED2014-96,CPM2014-153,LQE2014-124
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Committee ED
Conference Date 2014/11/20(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Effects of thermal cleaning on surface of bulk GaN substrates
Sub Title (in English)
Keyword(1) GaN
Keyword(2) thermal cleaning
Keyword(3) free-standing substrate
1st Author's Name S. OKADA
1st Author's Affiliation Mie University()
2nd Author's Name H. MIYAKE
2nd Author's Affiliation Mie University
3rd Author's Name K. HIRAMATSU
3rd Author's Affiliation Mie University
4th Author's Name R. MIYAGAWA
4th Author's Affiliation Nagoya Institute of Technology
5th Author's Name O. ERYU
5th Author's Affiliation Nagoya Institute of Technology
6th Author's Name T. HASHIZUME
6th Author's Affiliation Hokkaido University
Date 2014-11-28
Paper # ED2014-96,CPM2014-153,LQE2014-124
Volume (vol) vol.114
Number (no) 336
Page pp.pp.-
#Pages 5
Date of Issue