| Presentation | 2014-11-28 MOCVD growth and characterization of nearly-lattice-matched InAlN/AlGaN 2DEG heterostructures Shu FUJITA, Makoto MIYOSHI, Takashi EGAWA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | InAlN/AlGaN two-dimensional-electron gas (2DEG) heterostructures are expected to be able to show extremely high breakdown voltages as well as high 2DEG densities. In this study, we attempted to grow lattice-matched InAlN/AlGaN heterostructures by metalorganic chemical deposition (MOCVD) and to characterize them. Samples with the channel layers of Al_<0.1>Ga_<0.9>N of Al_<0.2>Ga_<0.8>N were successfully grown with nearly-lattice-matched structures. Their 2DEG densities were measured to be as high as 3×10^<13>/cm^2. It was confirmed that such high 2DEG densities are explained as a result of their high spontaneous polarization in InAlN barrier layers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | InAlN/AlGaN heterostructures / MOCVD / two-dimensional-electron gas |
| Paper # | ED2014-93,CPM2014-150,LQE2014-121 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2014/11/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MOCVD growth and characterization of nearly-lattice-matched InAlN/AlGaN 2DEG heterostructures |
| Sub Title (in English) | |
| Keyword(1) | InAlN/AlGaN heterostructures |
| Keyword(2) | MOCVD |
| Keyword(3) | two-dimensional-electron gas |
| 1st Author's Name | Shu FUJITA |
| 1st Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology() |
| 2nd Author's Name | Makoto MIYOSHI |
| 2nd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 3rd Author's Name | Takashi EGAWA |
| 3rd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2014-11-28 |
| Paper # | ED2014-93,CPM2014-150,LQE2014-121 |
| Volume (vol) | vol.114 |
| Number (no) | 336 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |