Presentation 2014-11-28
Mapping of thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy
Kenji SHIOJIMA, Shingo YAMAMOTO, Yuhei KIHARA,
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Abstract(in English) We have developed a new mapping technique, scanning internal-photoemission microscopy, to characterize the electrical inhomogeneity of metal-semiconductor interfaces. We characterized the initial stage of thermal degradation of Au/Ni/n-GaN Schottky contacts. We found that, upon 400℃ annealing, a partial thermal degradation occurred from a scratch on the dot, where Au atoms diffused to the interface and reacted with GaN. It was confirmed that this method is a powerful tool to map metal contacts for the investigations of partial thermal degradation, formation of parallel contacts, and inhomogeneity of surface chemistry.
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Keyword(in English) Schottky contacts / Scanning internal photoemission microscopy / GaN / Thermal degradation
Paper # ED2014-91,CPM2014-148,LQE2014-119
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Committee ED
Conference Date 2014/11/20(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Mapping of thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy
Sub Title (in English)
Keyword(1) Schottky contacts
Keyword(2) Scanning internal photoemission microscopy
Keyword(3) GaN
Keyword(4) Thermal degradation
1st Author's Name Kenji SHIOJIMA
1st Author's Affiliation Graduate School of Electrical and Electronics Engineering University of Fukui()
2nd Author's Name Shingo YAMAMOTO
2nd Author's Affiliation Graduate School of Electrical and Electronics Engineering University of Fukui
3rd Author's Name Yuhei KIHARA
3rd Author's Affiliation Graduate School of Electrical and Electronics Engineering University of Fukui
Date 2014-11-28
Paper # ED2014-91,CPM2014-148,LQE2014-119
Volume (vol) vol.114
Number (no) 336
Page pp.pp.-
#Pages 6
Date of Issue