Presentation 2014-11-26
Voltage Dependence of Single Event Transient Pulses on 65nm Silicon-on-Thin-BOX and Bulk processes
Eiji SONEZAKI, Kuiyuan ZHANG, Jun FURUTA, Kazutoshi KOBAYASHI,
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Abstract(in English) Recently, the growth of power consumption has been serious by process scaling. The lower voltage is most effective to implement reduced energy consumption. But, the lower voltage causes a decrease in reliability. In this study, we evaluate voltage dependence of SET (Single Event Transien) pulses by device simulations.
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Keyword(in English) Softerror / SOTB / SET / 65nmprocess / Device simulation
Paper # VLD2014-84,DC2014-38
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Committee DC
Conference Date 2014/11/19(1days)
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Registration To Dependable Computing (DC)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Voltage Dependence of Single Event Transient Pulses on 65nm Silicon-on-Thin-BOX and Bulk processes
Sub Title (in English)
Keyword(1) Softerror
Keyword(2) SOTB
Keyword(3) SET
Keyword(4) 65nmprocess
Keyword(5) Device simulation
1st Author's Name Eiji SONEZAKI
1st Author's Affiliation Department of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology()
2nd Author's Name Kuiyuan ZHANG
2nd Author's Affiliation Department of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology
3rd Author's Name Jun FURUTA
3rd Author's Affiliation Department of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology
4th Author's Name Kazutoshi KOBAYASHI
4th Author's Affiliation Department of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology
Date 2014-11-26
Paper # VLD2014-84,DC2014-38
Volume (vol) vol.114
Number (no) 329
Page pp.pp.-
#Pages 5
Date of Issue