| Presentation | 2014-11-20 Prediction of Performance Degradation and Lifetime for Semiconductor Devices Using Markov Chain Model Kai MOMODA, Koichi ENDO, Yoshihiro MIDOH, Katsuyoshi MIURA, Koji NAKAMAE, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We study on a method to predict performance degradation and lifetime of semiconductor devices under the assumption that the deviec characteristics can be monitored periodically. By using the Markov chain model, degradation and lifetime of the MOSFET are predicted based on measured values of gate leakage current. MOSFET degradation states are classfied into discrete states or classes according to its gate leakage current. State transition probabilities are obtained from measured gate leakage current data. In our study, gate leakage current data are obtained by simulation based on the percolation model instead of actual device measurement. Experiments to predict degradation and lifetime of MOSFETs are carried out. In the experiments, gate leakage current data obtained by simulating 1000 devices are used. The experimental results show that device monitoring can enable us to elongate lifetime of system. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Time-to-failure modeling / Time-to-failure statistics / Markov chain model / degradation prediction / lifetime prediction / gate leakage current |
| Paper # | R2014-61 |
| Date of Issue |
| Conference Information | |
| Committee | R |
|---|---|
| Conference Date | 2014/11/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Reliability(R) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Prediction of Performance Degradation and Lifetime for Semiconductor Devices Using Markov Chain Model |
| Sub Title (in English) | |
| Keyword(1) | Time-to-failure modeling |
| Keyword(2) | Time-to-failure statistics |
| Keyword(3) | Markov chain model |
| Keyword(4) | degradation prediction |
| Keyword(5) | lifetime prediction |
| Keyword(6) | gate leakage current |
| 1st Author's Name | Kai MOMODA |
| 1st Author's Affiliation | Grad. Sch. Information Science & Technology, Osaka University() |
| 2nd Author's Name | Koichi ENDO |
| 2nd Author's Affiliation | Grad. Sch. Information Science & Technology, Osaka University |
| 3rd Author's Name | Yoshihiro MIDOH |
| 3rd Author's Affiliation | Grad. Sch. Information Science & Technology, Osaka University |
| 4th Author's Name | Katsuyoshi MIURA |
| 4th Author's Affiliation | Grad. Sch. Information Science & Technology, Osaka University |
| 5th Author's Name | Koji NAKAMAE |
| 5th Author's Affiliation | Grad. Sch. Information Science & Technology, Osaka University |
| Date | 2014-11-20 |
| Paper # | R2014-61 |
| Volume (vol) | vol.114 |
| Number (no) | 314 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |