| Presentation | 2014-10-30 Studies on upper limit of all-optical semiconductor gate's cutoff frequency after optically accelerating more strongly, along with enhancing current injection rate for compensating for thus accelerated electron-hole recombination rate Hajime Itagaki, Yusuke Minamide, Kazuyuki Nagahiro, Jun Sakaguchi, Yoshiyasu Ueno, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We are trying to expand the application of all-optical logic gate at the 100 to 200Gb/s. To achieve this purpose, we've been improved the cut-off frequency upper limit with using the light acceleration method (Manning-Davies, 1994) which does not have the impurities doping and the introduction. Previously, we expanded the cut-off frequency of MQW SOA from 20GHz to 100GHz while proposing its new energy consumption model (Sakaguchi et al., 2008-2009). The limiting factor of cut-off frequency was only the injection current upper limit, and the new upper frequency limit and reactive current were not detected. In this paper, we investigated the limiting factor of cut-off frequency upper limit and the energy consumption values of the bulk SOA by improving the number of bonding wire and the method of cooling system. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Recovery time / Current injection / Cut-off frequency / Power consumption / Semiconductor optical amplifier / All-optical processing |
| Paper # | OCS2014-50,OPE2014-94,LQE2014-68 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2014/10/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Studies on upper limit of all-optical semiconductor gate's cutoff frequency after optically accelerating more strongly, along with enhancing current injection rate for compensating for thus accelerated electron-hole recombination rate |
| Sub Title (in English) | |
| Keyword(1) | Recovery time |
| Keyword(2) | Current injection |
| Keyword(3) | Cut-off frequency |
| Keyword(4) | Power consumption |
| Keyword(5) | Semiconductor optical amplifier |
| Keyword(6) | All-optical processing |
| 1st Author's Name | Hajime Itagaki |
| 1st Author's Affiliation | University of electro-communication() |
| 2nd Author's Name | Yusuke Minamide |
| 2nd Author's Affiliation | University of electro-communication |
| 3rd Author's Name | Kazuyuki Nagahiro |
| 3rd Author's Affiliation | University of electro-communication |
| 4th Author's Name | Jun Sakaguchi |
| 4th Author's Affiliation | University of electro-communication:(Present office)National Institute of Information and Communication Technology |
| 5th Author's Name | Yoshiyasu Ueno |
| 5th Author's Affiliation | University of electro-communication |
| Date | 2014-10-30 |
| Paper # | OCS2014-50,OPE2014-94,LQE2014-68 |
| Volume (vol) | vol.114 |
| Number (no) | 283 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |