| Presentation | 2014-10-31 Theoretical Analysis of GaInAsP/InP Electro-absorption Modulator utilizing Gap-surface-plasmon-polariton and ITO Thin Film Tomohiro AMEMIYA, Eijun MURAI, Zhichen Gu, Nobuhiko NISHIYAMA, Shigehisa ARAI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We proposed a III-V based electro-absorption plasmon modulator to construct fully monolithic plasmonic-integrated-circuits. Our device consists of a GaInAsP/InP gap-surface-plasmon-polariton waveguide with the TiO_2/ITO layers on both sides of the GaInAsP core. The intensity of transmitted light can be modulated by controlling the carrier concentration of the ITO layer. A positive gate voltage induces electron accumulation in the ITO layer (this is similar to the operation of FinFETs). The extinction ratio of 4.5dB/μm under a gate voltage swing of 0-5 V, and the insertion loss of 1.5dB/μm at non-bias condition were obtained. The figure of merit (ratio of extinction ratio to transmission loss) is 3-a result much superior to conventional Si-based plasmonic optical modulators. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Integrated Optics / Plasmonics / Modulator / Compound Semiconductors |
| Paper # | OCS2014-74,OPE2014-118,LQE2014-92 |
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| Committee | OCS |
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| Conference Date | 2014/10/23(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Optical Communication Systems (OCS) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Theoretical Analysis of GaInAsP/InP Electro-absorption Modulator utilizing Gap-surface-plasmon-polariton and ITO Thin Film |
| Sub Title (in English) | |
| Keyword(1) | Integrated Optics |
| Keyword(2) | Plasmonics |
| Keyword(3) | Modulator |
| Keyword(4) | Compound Semiconductors |
| 1st Author's Name | Tomohiro AMEMIYA |
| 1st Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology() |
| 2nd Author's Name | Eijun MURAI |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | Zhichen Gu |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 4th Author's Name | Nobuhiko NISHIYAMA |
| 4th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
| 5th Author's Name | Shigehisa ARAI |
| 5th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:Department of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| Date | 2014-10-31 |
| Paper # | OCS2014-74,OPE2014-118,LQE2014-92 |
| Volume (vol) | vol.114 |
| Number (no) | 281 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |