Presentation | 2014-10-30 Fabrication of membrane lasers by epitaxial growth of InP using InP-based active layer film on SiO_2/Si substrate Takuro Fujii, Tomonari Sato, Koji Takeda, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Integration of III-V lasers on a Si substrate is the key to realizing large-scale photonic integrated circuits (PICs) using silicon (Si) device fabrication technologies. We have therefore developed membrane buried heterostructure lasers on SiO_2/Si by epitaxial growth on an InP-based membrane including multiple quantum well, which is directly bonded to a SiO_2/Si substrate. There was no degradation of the crystal quality even after the high-temperature annealing. We have successfully fabricated the compact DFB laser with a 120-μm-long cavity on SiO_2, and also experimentally confirmed that the room temperature continuous wave emission at a threshold current of 1.8 mA and the direct modulation of 40-Gbit/s NRZ were achieved. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Epitaxial growth / DFB laser / Direct bonding / Si photonics |
Paper # | OCS2014-68,OPE2014-112,LQE2014-86 |
Date of Issue |
Conference Information | |
Committee | OCS |
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Conference Date | 2014/10/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Optical Communication Systems (OCS) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of membrane lasers by epitaxial growth of InP using InP-based active layer film on SiO_2/Si substrate |
Sub Title (in English) | |
Keyword(1) | Epitaxial growth |
Keyword(2) | DFB laser |
Keyword(3) | Direct bonding |
Keyword(4) | Si photonics |
1st Author's Name | Takuro Fujii |
1st Author's Affiliation | Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation() |
2nd Author's Name | Tomonari Sato |
2nd Author's Affiliation | Nanophotonics Center, NTT Corporation |
3rd Author's Name | Koji Takeda |
3rd Author's Affiliation | Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation |
4th Author's Name | Koichi Hasebe |
4th Author's Affiliation | Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation |
5th Author's Name | Takaaki Kakitsuka |
5th Author's Affiliation | Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation |
6th Author's Name | Shinji Matsuo |
6th Author's Affiliation | Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation |
Date | 2014-10-30 |
Paper # | OCS2014-68,OPE2014-112,LQE2014-86 |
Volume (vol) | vol.114 |
Number (no) | 281 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |