Presentation | 2014-10-30 Fabrication of InAs quantum dots on vicinal (001)InP substrate and its application for laser diode Kouichi AKAHANE, Naokatsu YAMAMOTO, Toshimasa UMEZAWA, Tetsuya KAWANISHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We developed a growth technique of InAs QD on InP(001) substrate by using vicinal surface of (001) and As_2 fulux. Using this structure, we successfully fabricated a highly stacked InAs QD laser. A stack of 30 InAs QD layers and InGaAlAs spacer layers were grown for an active region with a strain-compensation technique. This QD laser shows lasing at 1576 nm with a threshold current of 1037 mA at room temperature. The lasing wavelength was almost same as the peak wavelength of QD ground levels in photoluminescence. Therefore, this lasing occurs at QD ground levels, which result from the large optical gain of the highly stacked QDs.. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | quantum dot / quantum dash / strain compensation semiconductor laser |
Paper # | OCS2014-67,OPE2014-111,LQE2014-85 |
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Conference Information | |
Committee | OCS |
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Conference Date | 2014/10/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Optical Communication Systems (OCS) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of InAs quantum dots on vicinal (001)InP substrate and its application for laser diode |
Sub Title (in English) | |
Keyword(1) | quantum dot |
Keyword(2) | quantum dash |
Keyword(3) | strain compensation semiconductor laser |
1st Author's Name | Kouichi AKAHANE |
1st Author's Affiliation | National Institute of Information and Communications Technology() |
2nd Author's Name | Naokatsu YAMAMOTO |
2nd Author's Affiliation | National Institute of Information and Communications Technology |
3rd Author's Name | Toshimasa UMEZAWA |
3rd Author's Affiliation | National Institute of Information and Communications Technology |
4th Author's Name | Tetsuya KAWANISHI |
4th Author's Affiliation | National Institute of Information and Communications Technology |
Date | 2014-10-30 |
Paper # | OCS2014-67,OPE2014-111,LQE2014-85 |
Volume (vol) | vol.114 |
Number (no) | 281 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |