Presentation 2014-10-30
Fabrication of InAs quantum dots on vicinal (001)InP substrate and its application for laser diode
Kouichi AKAHANE, Naokatsu YAMAMOTO, Toshimasa UMEZAWA, Tetsuya KAWANISHI,
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Abstract(in English) We developed a growth technique of InAs QD on InP(001) substrate by using vicinal surface of (001) and As_2 fulux. Using this structure, we successfully fabricated a highly stacked InAs QD laser. A stack of 30 InAs QD layers and InGaAlAs spacer layers were grown for an active region with a strain-compensation technique. This QD laser shows lasing at 1576 nm with a threshold current of 1037 mA at room temperature. The lasing wavelength was almost same as the peak wavelength of QD ground levels in photoluminescence. Therefore, this lasing occurs at QD ground levels, which result from the large optical gain of the highly stacked QDs..
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Keyword(in English) quantum dot / quantum dash / strain compensation semiconductor laser
Paper # OCS2014-67,OPE2014-111,LQE2014-85
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Conference Information
Committee OCS
Conference Date 2014/10/23(1days)
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Registration To Optical Communication Systems (OCS)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of InAs quantum dots on vicinal (001)InP substrate and its application for laser diode
Sub Title (in English)
Keyword(1) quantum dot
Keyword(2) quantum dash
Keyword(3) strain compensation semiconductor laser
1st Author's Name Kouichi AKAHANE
1st Author's Affiliation National Institute of Information and Communications Technology()
2nd Author's Name Naokatsu YAMAMOTO
2nd Author's Affiliation National Institute of Information and Communications Technology
3rd Author's Name Toshimasa UMEZAWA
3rd Author's Affiliation National Institute of Information and Communications Technology
4th Author's Name Tetsuya KAWANISHI
4th Author's Affiliation National Institute of Information and Communications Technology
Date 2014-10-30
Paper # OCS2014-67,OPE2014-111,LQE2014-85
Volume (vol) vol.114
Number (no) 281
Page pp.pp.-
#Pages 4
Date of Issue