Presentation | 2014-10-30 Material gain analysis of GeSn/SiGeSn quantum wells based on many-body theory T. Fujisawa, K. Saitoh, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Material gain of GeSn/SiGeSn quantum wells, which can be grown on Si substrate by using a buffer layer, is analyzed based on many-body theory (MBT). MBT can take into account a gain spectrum broadening associated with scattering phenomena, such as Coulomb scattering, based on quantum field theory, and does not need any fitting parameters, such as a relaxation time, determined by experiment. Not only Γ- but also carrier distributions in L-point are considered for the gain analysis. By using MBT, the quantum well structures maximizing the material gain and the differential gain are investigated in terms of the well thickness, the strain, and the energy difference of quantum states between Γ- and L-point. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Si photonics / GeSn quantum well / Many-body theory |
Paper # | OCS2014-51,OPE2014-95,LQE2014-69 |
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Conference Information | |
Committee | OCS |
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Conference Date | 2014/10/23(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Optical Communication Systems (OCS) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Material gain analysis of GeSn/SiGeSn quantum wells based on many-body theory |
Sub Title (in English) | |
Keyword(1) | Si photonics |
Keyword(2) | GeSn quantum well |
Keyword(3) | Many-body theory |
1st Author's Name | T. Fujisawa |
1st Author's Affiliation | Graduate school of information science and technology, Hokkaido university() |
2nd Author's Name | K. Saitoh |
2nd Author's Affiliation | Graduate school of information science and technology, Hokkaido university |
Date | 2014-10-30 |
Paper # | OCS2014-51,OPE2014-95,LQE2014-69 |
Volume (vol) | vol.114 |
Number (no) | 281 |
Page | pp.pp.- |
#Pages | 6 |
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