Presentation 2014-10-30
Material gain analysis of GeSn/SiGeSn quantum wells based on many-body theory
T. Fujisawa, K. Saitoh,
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Abstract(in English) Material gain of GeSn/SiGeSn quantum wells, which can be grown on Si substrate by using a buffer layer, is analyzed based on many-body theory (MBT). MBT can take into account a gain spectrum broadening associated with scattering phenomena, such as Coulomb scattering, based on quantum field theory, and does not need any fitting parameters, such as a relaxation time, determined by experiment. Not only Γ- but also carrier distributions in L-point are considered for the gain analysis. By using MBT, the quantum well structures maximizing the material gain and the differential gain are investigated in terms of the well thickness, the strain, and the energy difference of quantum states between Γ- and L-point.
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Keyword(in English) Si photonics / GeSn quantum well / Many-body theory
Paper # OCS2014-51,OPE2014-95,LQE2014-69
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Committee OCS
Conference Date 2014/10/23(1days)
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Registration To Optical Communication Systems (OCS)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Material gain analysis of GeSn/SiGeSn quantum wells based on many-body theory
Sub Title (in English)
Keyword(1) Si photonics
Keyword(2) GeSn quantum well
Keyword(3) Many-body theory
1st Author's Name T. Fujisawa
1st Author's Affiliation Graduate school of information science and technology, Hokkaido university()
2nd Author's Name K. Saitoh
2nd Author's Affiliation Graduate school of information science and technology, Hokkaido university
Date 2014-10-30
Paper # OCS2014-51,OPE2014-95,LQE2014-69
Volume (vol) vol.114
Number (no) 281
Page pp.pp.-
#Pages 6
Date of Issue