Presentation	2014-10-02 A Low Supply Voltage Six-Transistor CMOS SRAM Employing Adaptively Lowering Memory Cell Supply Voltage for "Write" Operation Nobuaki Kobayashi, Ryusuke Ito, Tadayoshi Enomoto,
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Abstract(in English)	We developed and applied a new circuit, called the "Self-controllable Voltage Level (SVL)" circuit, not only to expand both "write" and "read" stabilities, but also to achieve a low standby power dissipation (P_) and a high static-noise margin in a single power supply, 90-nm, 2-kbit, six-transistor CMOS SRAM. The SVL circuit can adaptively lower and higher a word-line voltage for "read" and "write" operations, respectively. It can also adaptively lower and higher a memory cell supply voltage for "write" and "hold" operations, and the "read" operation, respectively. At the threshold voltage fluctuation of +6σ, a minimum supply voltage (V_ ) for the "write" operation of the conventional SRAM was 0.37 V, while on the other hand, the minimum V_ for the "write" operation of the newly developed SRAM was 0.22V. This result showed that the SVL circuit could greatly expand the V_ range for the "write" operation. A Si area overhead of the SVL circuit is only 1.383 % of the conventional SRAM.
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Keyword(in English)	CMOS / SRAM / "write" operation / low supply voltage / self-controllable voltage level (SVL) circuit / area overhead
Paper #	VLD2014-66,ICD2014-59,IE2014-45
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Conference Information
Committee	ICD
Conference Date	2014/9/25(1days)
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Paper Information
Registration To	Integrated Circuits and Devices (ICD)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	A Low Supply Voltage Six-Transistor CMOS SRAM Employing Adaptively Lowering Memory Cell Supply Voltage for "Write" Operation
Sub Title (in English)
Keyword(1)	CMOS
Keyword(2)	SRAM
Keyword(3)	"write" operation
Keyword(4)	low supply voltage
Keyword(5)	self-controllable voltage level (SVL) circuit
Keyword(6)	area overhead
1st Author's Name	Nobuaki Kobayashi
1st Author's Affiliation	Graduate School of Science and Engineering, Chuo University()
2nd Author's Name	Ryusuke Ito
2nd Author's Affiliation	Graduate School of Science and Engineering, Chuo University
3rd Author's Name	Tadayoshi Enomoto
3rd Author's Affiliation	Graduate School of Science and Engineering, Chuo University
Date	2014-10-02
Paper #	VLD2014-66,ICD2014-59,IE2014-45
Volume (vol)	vol.114
Number (no)	232
Page	pp.pp.-
#Pages	6
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