Presentation 2014-10-24
Silicidation reaction in Ni/Si system with thin interposed SiO_2 layer
Atsushi NOYA, Mayumi B. TAKEYAMA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) In the Ni/Si system, we have reported that the composition of an amorphous alloy formed by intermixing between Ni and Si prior to the phase formation is important to determine which phase will be subsequently nucleated. In this study, we examine the first phase formation in the Ni/Si system with an extremely thin SiO_2 layer to suppress the Ni diffusion into Si. The result indicates that NiSi_2, the high-temperature end phase in the ordinarily phase formation sequence, is formed as the first phase at a low temperature. This indicates that the NiSi_2 phase nucleates skipping the phase formation sequence owing to kinetic constraint.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Silicides / NiSi_2 / Solid-state reaction / Reaction kinetics
Paper # CPM2014-113
Date of Issue

Conference Information
Committee CPM
Conference Date 2014/10/17(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Silicidation reaction in Ni/Si system with thin interposed SiO_2 layer
Sub Title (in English)
Keyword(1) Silicides
Keyword(2) NiSi_2
Keyword(3) Solid-state reaction
Keyword(4) Reaction kinetics
1st Author's Name Atsushi NOYA
1st Author's Affiliation Faculty of Engineering, Kitami Institute of Technology()
2nd Author's Name Mayumi B. TAKEYAMA
2nd Author's Affiliation Faculty of Engineering, Kitami Institute of Technology
Date 2014-10-24
Paper # CPM2014-113
Volume (vol) vol.114
Number (no) 276
Page pp.pp.-
#Pages 4
Date of Issue