Presentation | 2014-10-24 Silicidation reaction in Ni/Si system with thin interposed SiO_2 layer Atsushi NOYA, Mayumi B. TAKEYAMA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In the Ni/Si system, we have reported that the composition of an amorphous alloy formed by intermixing between Ni and Si prior to the phase formation is important to determine which phase will be subsequently nucleated. In this study, we examine the first phase formation in the Ni/Si system with an extremely thin SiO_2 layer to suppress the Ni diffusion into Si. The result indicates that NiSi_2, the high-temperature end phase in the ordinarily phase formation sequence, is formed as the first phase at a low temperature. This indicates that the NiSi_2 phase nucleates skipping the phase formation sequence owing to kinetic constraint. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Silicides / NiSi_2 / Solid-state reaction / Reaction kinetics |
Paper # | CPM2014-113 |
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Committee | CPM |
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Conference Date | 2014/10/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Silicidation reaction in Ni/Si system with thin interposed SiO_2 layer |
Sub Title (in English) | |
Keyword(1) | Silicides |
Keyword(2) | NiSi_2 |
Keyword(3) | Solid-state reaction |
Keyword(4) | Reaction kinetics |
1st Author's Name | Atsushi NOYA |
1st Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology() |
2nd Author's Name | Mayumi B. TAKEYAMA |
2nd Author's Affiliation | Faculty of Engineering, Kitami Institute of Technology |
Date | 2014-10-24 |
Paper # | CPM2014-113 |
Volume (vol) | vol.114 |
Number (no) | 276 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |