| Presentation | 2014-10-24 Effect of Post-Deposition Annealing in Hydrogen Atmosphere on 4H-SiCMIS Property Prepared by Thermal CVD Method Using Tetraethylorthosilicate Takuo KANOU, Yoshiyuki AKAHANE, Yuta KOBAYASHI, Tomohiko YAMAKAMI, Kiichi KAMIMURA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Silicon dioxide films were deposited by the thermal decomposition of tetraethylorthosilicate (TEOS) to form the MIS structure, and were annealed in hydrogen ambient to improve the quality of TEOS-SiO_2/SiC MIS interface. The quality of the film was improved by annealing in hydrogen ambient after deposition, and the interface state density was greatly reduced. Defects seemed to be formed at the interface between SiO_2 and SiC during the annealing in N_2 by the reaction of residual TEOS molecules in the SiO_2 film with the SiC surface. The interface property was improved by the annealing in Hi. This may be because no oxidation occurred and defects were terminated by H atoms during annealing in H_2. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | TEOS / SiC / MOS / CVD / annealing |
| Paper # | CPM2014-109 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
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| Conference Date | 2014/10/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of Post-Deposition Annealing in Hydrogen Atmosphere on 4H-SiCMIS Property Prepared by Thermal CVD Method Using Tetraethylorthosilicate |
| Sub Title (in English) | |
| Keyword(1) | TEOS |
| Keyword(2) | SiC |
| Keyword(3) | MOS |
| Keyword(4) | CVD |
| Keyword(5) | annealing |
| 1st Author's Name | Takuo KANOU |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Shinshu University() |
| 2nd Author's Name | Yoshiyuki AKAHANE |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Shinshu University |
| 3rd Author's Name | Yuta KOBAYASHI |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Shinshu University |
| 4th Author's Name | Tomohiko YAMAKAMI |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Shinshu University |
| 5th Author's Name | Kiichi KAMIMURA |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Shinshu University |
| Date | 2014-10-24 |
| Paper # | CPM2014-109 |
| Volume (vol) | vol.114 |
| Number (no) | 276 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |