Presentation 2014-10-24
A Study of BCN production process by thermal chemical vapor deposition
Yuki YAMAZAKI, Takuya HAYASHI, Hiroyuki MURAMATSU,
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Abstract(in English) It is a two-dimensional material having a thickness of one carbon atom, graphene has high carrier mobility. However, since the theoretical band gap is not present, it is necessary to introduce a band gap to do application to the semiconductor device in the graphene. Accordingly, we synthesized boron nitride is an insulator graphene In this study, by varying the retention time and the heat treatment temperature of BN source, we examined the effect on h-BCN generated. A result, the crystallinity of the h-BNC is generated holding time and the heat treatment temperature of BN source and greatly affects the number of layers has been suggested.
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Keyword(in English) Graphene / Thermal Chemical Vapor Deposition
Paper # CPM2014-104
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Committee CPM
Conference Date 2014/10/17(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Study of BCN production process by thermal chemical vapor deposition
Sub Title (in English)
Keyword(1) Graphene
Keyword(2) Thermal Chemical Vapor Deposition
1st Author's Name Yuki YAMAZAKI
1st Author's Affiliation Graduate School of Science and Engineering, Shinshu University()
2nd Author's Name Takuya HAYASHI
2nd Author's Affiliation Faculty of Engineering, Shinshu University
3rd Author's Name Hiroyuki MURAMATSU
3rd Author's Affiliation Faculty of Engineering, Shinshu University
Date 2014-10-24
Paper # CPM2014-104
Volume (vol) vol.114
Number (no) 276
Page pp.pp.-
#Pages 2
Date of Issue