Presentation | 2014-10-24 A Study of BCN production process by thermal chemical vapor deposition Yuki YAMAZAKI, Takuya HAYASHI, Hiroyuki MURAMATSU, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | It is a two-dimensional material having a thickness of one carbon atom, graphene has high carrier mobility. However, since the theoretical band gap is not present, it is necessary to introduce a band gap to do application to the semiconductor device in the graphene. Accordingly, we synthesized boron nitride is an insulator graphene In this study, by varying the retention time and the heat treatment temperature of BN source, we examined the effect on h-BCN generated. A result, the crystallinity of the h-BNC is generated holding time and the heat treatment temperature of BN source and greatly affects the number of layers has been suggested. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Graphene / Thermal Chemical Vapor Deposition |
Paper # | CPM2014-104 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2014/10/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | A Study of BCN production process by thermal chemical vapor deposition |
Sub Title (in English) | |
Keyword(1) | Graphene |
Keyword(2) | Thermal Chemical Vapor Deposition |
1st Author's Name | Yuki YAMAZAKI |
1st Author's Affiliation | Graduate School of Science and Engineering, Shinshu University() |
2nd Author's Name | Takuya HAYASHI |
2nd Author's Affiliation | Faculty of Engineering, Shinshu University |
3rd Author's Name | Hiroyuki MURAMATSU |
3rd Author's Affiliation | Faculty of Engineering, Shinshu University |
Date | 2014-10-24 |
Paper # | CPM2014-104 |
Volume (vol) | vol.114 |
Number (no) | 276 |
Page | pp.pp.- |
#Pages | 2 |
Date of Issue |