Presentation 2014-08-22
Realization of GaAs_<1-x>Bi_x laser diodes with low temperature dependence of oscillation wavelength
Takuma FUYUKI, Kenji YOSHIDA, Ryo YOSHIOKA, Masahiro YOSHIMOTO,
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Abstract(in English) The coherent epitaxial growth GaAs_<1-x>Bi_x (x ≤ 9.5%) films on GaAs substrate with high optical quality was achieved grown by molecular beam epitaxy. For GaAs_<0.905>Bi_<0.095> film, photoluminescence (PL) at 1.3 μm without PL intensity degradation was observed at room temperature. Lasing oscillation at wavelengths up to 1045 nm at room temperature has been realized from high quality GaAs_<1-x>Bi_x Fabry-Perot laser diodes (FP-LDs) by using electrical injection. The temperature coefficient of the lasing wavelength in GaAs_<0.97>Bi_<0.03> FP-LDs is reduced to 0.17 nm/K, which is only 45% of that of GaAs FP-LDs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaAsBi / Semiconductor semimetal alloy / Laser diodes / MBE
Paper # R2014-40,EMD2014-45,CPM2014-60,OPE2014-70,LQE2014-44
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Committee LQE
Conference Date 2014/8/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Realization of GaAs_<1-x>Bi_x laser diodes with low temperature dependence of oscillation wavelength
Sub Title (in English)
Keyword(1) GaAsBi
Keyword(2) Semiconductor semimetal alloy
Keyword(3) Laser diodes
Keyword(4) MBE
1st Author's Name Takuma FUYUKI
1st Author's Affiliation Kyoto Institute of Technology()
2nd Author's Name Kenji YOSHIDA
2nd Author's Affiliation / /
3rd Author's Name Ryo YOSHIOKA
3rd Author's Affiliation
4th Author's Name Masahiro YOSHIMOTO
4th Author's Affiliation
Date 2014-08-22
Paper # R2014-40,EMD2014-45,CPM2014-60,OPE2014-70,LQE2014-44
Volume (vol) vol.114
Number (no) 187
Page pp.pp.-
#Pages 4
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