Presentation 2014-08-22
High-speed avalanche photodiodes with vertical illumination structure for reliability and stability
Masahiro NADA, Haruki YOKOYAMA, Yoshifumi MURAMOTO, Takuya HOSHI, Hideaki MATSUZAKI,
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Abstract(in English) An vertical illumination avalanche photodiode (APD) which is suitable for high-speed operation and keeping reliability is proposed and experimentally investigated. The APD does not need selective doping techniques such as ion implantation and selective diffusion traditionally employed for reliability, results in the simple fabrication process. The fabricated APD shows negligible small the surface leakage current, and edge-breakdown free operation. As for RF characteristics, sufficient 3-dB bandwidth for 25-Gbit/s operation is obtained.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Avalanche photodiode / Vertical illumination / Mesa structure
Paper # R2014-41,EMD2014-46,CPM2014-61,OPE2014-71,LQE2014-45
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Committee OPE
Conference Date 2014/8/14(1days)
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Registration To Optoelectronics (OPE)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) High-speed avalanche photodiodes with vertical illumination structure for reliability and stability
Sub Title (in English)
Keyword(1) Avalanche photodiode
Keyword(2) Vertical illumination
Keyword(3) Mesa structure
1st Author's Name Masahiro NADA
1st Author's Affiliation Device Technology Laboratories, NTT Corporation()
2nd Author's Name Haruki YOKOYAMA
2nd Author's Affiliation Device Technology Laboratories, NTT Corporation
3rd Author's Name Yoshifumi MURAMOTO
3rd Author's Affiliation Device Innovation Center, NTT Corporation
4th Author's Name Takuya HOSHI
4th Author's Affiliation Device Technology Laboratories, NTT Corporation
5th Author's Name Hideaki MATSUZAKI
5th Author's Affiliation Device Technology Laboratories, NTT Corporation
Date 2014-08-22
Paper # R2014-41,EMD2014-46,CPM2014-61,OPE2014-71,LQE2014-45
Volume (vol) vol.114
Number (no) 186
Page pp.pp.-
#Pages 4
Date of Issue