Presentation | 2014-08-21 Lateral Current Injection DFB Laser on Si/SiO_2 Substrate S. MATSUO, T. Fujii, K. Hasebe, K. TAKEDA, T. SATO, T. KAKITSUKA, |
---|---|
PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Membrane lasers with buried heterostructure are expected to obtain extremely small operating energy because of the enhancement of optical and carrier confinements. Therefore, these lasers are suitable for use the light sources in datacom and computercom applications. In this context, we have developed DFB laser on SiO_2/Si substrate for datacom application by combining direct bonding and regrowth techniques. The DFB laser exhibits a threshold current of 1.8 mA and clear eye-opening with 25.8-Gbit/s NRZ signal when the bias current is 8.0 mA. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | DFB laser / laser on Si / lateral pin junction |
Paper # | R2014-25,EMD2014-30,CPM2014-45,OPE2014-55,LQE2014-29 |
Date of Issue |
Conference Information | |
Committee | OPE |
---|---|
Conference Date | 2014/8/14(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
Secretary | |
Assistant |
Paper Information | |
Registration To | Optoelectronics (OPE) |
---|---|
Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Lateral Current Injection DFB Laser on Si/SiO_2 Substrate |
Sub Title (in English) | |
Keyword(1) | DFB laser |
Keyword(2) | laser on Si |
Keyword(3) | lateral pin junction |
1st Author's Name | S. MATSUO |
1st Author's Affiliation | Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation() |
2nd Author's Name | T. Fujii |
2nd Author's Affiliation | Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation |
3rd Author's Name | K. Hasebe |
3rd Author's Affiliation | Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation |
4th Author's Name | K. TAKEDA |
4th Author's Affiliation | Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation |
5th Author's Name | T. SATO |
5th Author's Affiliation | Nanophotonics Center, NTT Corporation |
6th Author's Name | T. KAKITSUKA |
6th Author's Affiliation | Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation |
Date | 2014-08-21 |
Paper # | R2014-25,EMD2014-30,CPM2014-45,OPE2014-55,LQE2014-29 |
Volume (vol) | vol.114 |
Number (no) | 186 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |