Presentation | 2014-07-10 Solution-Processed Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp Masayuki CHIKAMATSU, Reiko AZUMI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We fabricated p- and n-type solution-processed organic thin-film transistors and CMOS inverter with polymer gate insulator printed by using a polydimethylsiloxane stamp. An oligothiophene derivative (BHD6T) as p-type semiconductor and a fullerene derivative (C60MC12) as n-type semiconductor were used. Field-effect mobilities and threshold voltages were 0.02 cm^2/Vs, -24.6 V for p-channel and 0.17 cm^2/Vs, 43.8 V for n-channel, respectively. The inverter exhibited a sharp inversion with a small hysteresis and a relatively high gain of 56. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Soluble organic semiconductors / fluoropolymer gate dielectric / organic thin-film transistor / polydimethylsiloxane / organic CMOS circuits |
Paper # | OME2014-32 |
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Conference Information | |
Committee | OME |
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Conference Date | 2014/7/3(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Organic Material Electronics (OME) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Solution-Processed Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp |
Sub Title (in English) | |
Keyword(1) | Soluble organic semiconductors |
Keyword(2) | fluoropolymer gate dielectric |
Keyword(3) | organic thin-film transistor |
Keyword(4) | polydimethylsiloxane |
Keyword(5) | organic CMOS circuits |
1st Author's Name | Masayuki CHIKAMATSU |
1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST)() |
2nd Author's Name | Reiko AZUMI |
2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
Date | 2014-07-10 |
Paper # | OME2014-32 |
Volume (vol) | vol.114 |
Number (no) | 134 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |