Presentation 2014-07-10
Solution-Processed Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp
Masayuki CHIKAMATSU, Reiko AZUMI,
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Abstract(in English) We fabricated p- and n-type solution-processed organic thin-film transistors and CMOS inverter with polymer gate insulator printed by using a polydimethylsiloxane stamp. An oligothiophene derivative (BHD6T) as p-type semiconductor and a fullerene derivative (C60MC12) as n-type semiconductor were used. Field-effect mobilities and threshold voltages were 0.02 cm^2/Vs, -24.6 V for p-channel and 0.17 cm^2/Vs, 43.8 V for n-channel, respectively. The inverter exhibited a sharp inversion with a small hysteresis and a relatively high gain of 56.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Soluble organic semiconductors / fluoropolymer gate dielectric / organic thin-film transistor / polydimethylsiloxane / organic CMOS circuits
Paper # OME2014-32
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Committee OME
Conference Date 2014/7/3(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Solution-Processed Organic Thin-Film Transistors Printed by Using a Polydimethylsiloxane Stamp
Sub Title (in English)
Keyword(1) Soluble organic semiconductors
Keyword(2) fluoropolymer gate dielectric
Keyword(3) organic thin-film transistor
Keyword(4) polydimethylsiloxane
Keyword(5) organic CMOS circuits
1st Author's Name Masayuki CHIKAMATSU
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)()
2nd Author's Name Reiko AZUMI
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
Date 2014-07-10
Paper # OME2014-32
Volume (vol) vol.114
Number (no) 134
Page pp.pp.-
#Pages 4
Date of Issue