| Presentation | 2014-08-05 Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage Azusa OSHIMA, Ryo KISHIDA, Michitarou YABUUCHI, Kazutoshi KOBAYASHI, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Reliability issues, such as plasma-induced damage (PID) and Bias Temperature Instability (BTI), become dominant on integrated circuits. We measure initial frequencies on ring oscillators with an antenna in one stage in 65-nm bulk and SOTB (Silicon On Thin BOX) processes. Initial frequency variations are converted to threshold voltage shifts. Impacts on initial frequencies and threshold voltages by PID are evaluated. We show that PID can be relieved using the drain-connection-structures in which an antenna is connected to drain first or at the same time as a gate, but the amount of relaxation of PID becomes small when an antenna has a big perimeter. We also reveal that threshold voltage increases with antenna ratio in the drain-connection-structures. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | plasma-induced damage / FD-SOI / BTI / ring oscillator / frequency / threshold voltage / reliabilty |
| Paper # | SDM2014-79,ICD2014-48 |
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| Conference Information | |
| Committee | ICD |
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| Conference Date | 2014/7/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage |
| Sub Title (in English) | |
| Keyword(1) | plasma-induced damage |
| Keyword(2) | FD-SOI |
| Keyword(3) | BTI |
| Keyword(4) | ring oscillator |
| Keyword(5) | frequency |
| Keyword(6) | threshold voltage |
| Keyword(7) | reliabilty |
| 1st Author's Name | Azusa OSHIMA |
| 1st Author's Affiliation | Department of Electoronics, Kyoto Institute of Technology() |
| 2nd Author's Name | Ryo KISHIDA |
| 2nd Author's Affiliation | Department of Electoronics, Kyoto Institute of Technology |
| 3rd Author's Name | Michitarou YABUUCHI |
| 3rd Author's Affiliation | Department of Electoronics, Kyoto Institute of Technology |
| 4th Author's Name | Kazutoshi KOBAYASHI |
| 4th Author's Affiliation | Department of Electoronics, Kyoto Institute of Technology |
| Date | 2014-08-05 |
| Paper # | SDM2014-79,ICD2014-48 |
| Volume (vol) | vol.114 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |