Presentation	2014-08-05 Tr variance evaluation induced by probing pressure and its stress extraction methodology in 28nm High-K and Metal Gate process Takeshi OKAGAKI, Takumi HASEGAWA, Hiroyuki TAKASHINO, Masako FUJII, Atsushi TSUDA, Koji SHIBUTANI, Yoshinori DEGUCHI, Miho YOKOTA, Kazunori ONOZAWA,
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Abstract(in English)	We discuss characteristics variance in detail, caused by probing stress in 28nm High-K and Metal Gate process. The V_	variation of nch large size transistor increases by 20% comparnig with weak probing pressure (⋍ 0). Regarding small size transistors, probing stress impact both on V_	fluctuation and on T_ fluctuation is small. Moreover, we extracted the space distribution of probing stress quantitatively. It is useful to calibrate a stress simulation methodology and to facilitate evaluation of the mechanical strength of the material.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	probing pressure / V_	fluctuation
Paper #	SDM2014-77,ICD2014-46
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Committee	ICD
Conference Date	2014/7/28(1days)
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Registration To	Integrated Circuits and Devices (ICD)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Tr variance evaluation induced by probing pressure and its stress extraction methodology in 28nm High-K and Metal Gate process
Sub Title (in English)
Keyword(1)	probing pressure
Keyword(2)	V_	fluctuation
1st Author's Name	Takeshi OKAGAKI
1st Author's Affiliation	Renesas Electronics Corp.()
2nd Author's Name	Takumi HASEGAWA
2nd Author's Affiliation	Renesas Electronics Corp.
3rd Author's Name	Hiroyuki TAKASHINO
3rd Author's Affiliation	Renesas Electronics Corp.
4th Author's Name	Masako FUJII
4th Author's Affiliation	Renesas Electronics Corp.
5th Author's Name	Atsushi TSUDA
5th Author's Affiliation	Renesas Electronics Corp.
6th Author's Name	Koji SHIBUTANI
6th Author's Affiliation	Renesas Electronics Corp.
7th Author's Name	Yoshinori DEGUCHI
7th Author's Affiliation	Renesas Electronics Corp.
8th Author's Name	Miho YOKOTA
8th Author's Affiliation	Renesas Electronics Corp.
9th Author's Name	Kazunori ONOZAWA
9th Author's Affiliation	Renesas Electronics Corp.
Date	2014-08-05
Paper #	SDM2014-77,ICD2014-46
Volume (vol)	vol.114
Number (no)	175
Page	pp.pp.-
#Pages	4
Date of Issue