Presentation	2014-08-05 Oxide Semiconductor-based Transistors Formed in LSI Interconnects Hiroshi SUNAMURA, Naoya FURUTAKE, Shinobu SAITO, Mitsuru NARIHIRO, Yoshihiro HAYASHI,
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Abstract(in English)	We report on the latest progress on our proposed new transistor technology called BEOL-FET, in which we form oxide-based transistors in LSI interconnects, aiming at compact on-chip high-voltage interface realization. NFETs using wide-gap amorphous oxide semiconductor InGaZnO (IGZO, 3.3eV) as channel, are shown to exhibit normally-off characteristics, high mobility and high on/off ratio. A lower AR_ has been achieved and is now lower than Si-LDMOS. We also report on our work on complementary FET enablement for making these devices applicable to wider range of applications. Cu-process-compatible PFETs are realized with high on/off ratio using amorphous SnO and demonstrate complementary inverter operation with NFET/PFET integrated on the same interconnect level. 6T-SRAM operation was verified as a first step towards BEOL-CMOS logic circuits.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	BEOL-Tr / BEOL-FET / oxide semiconductor / high-V_ / pre-driver / IGZO / SnO / AR_ / complementary / CMOS
Paper #	SDM2014-76,ICD2014-45
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Conference Information
Committee	ICD
Conference Date	2014/7/28(1days)
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Paper Information
Registration To	Integrated Circuits and Devices (ICD)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Oxide Semiconductor-based Transistors Formed in LSI Interconnects
Sub Title (in English)
Keyword(1)	BEOL-Tr
Keyword(2)	BEOL-FET
Keyword(3)	oxide semiconductor
Keyword(4)	high-V_
Keyword(5)	pre-driver
Keyword(6)	IGZO
Keyword(7)	SnO
Keyword(8)	AR_
Keyword(9)	complementary
Keyword(10)	CMOS
1st Author's Name	Hiroshi SUNAMURA
1st Author's Affiliation	Renesas Electronics Corporation()
2nd Author's Name	Naoya FURUTAKE
2nd Author's Affiliation	Renesas Electronics Corporation
3rd Author's Name	Shinobu SAITO
3rd Author's Affiliation	Renesas Electronics Corporation
4th Author's Name	Mitsuru NARIHIRO
4th Author's Affiliation	Renesas Electronics Corporation
5th Author's Name	Yoshihiro HAYASHI
5th Author's Affiliation	Renesas Electronics Corporation
Date	2014-08-05
Paper #	SDM2014-76,ICD2014-45
Volume (vol)	vol.114
Number (no)	175
Page	pp.pp.-
#Pages	6
Date of Issue