Presentation 2014-08-05
Low-Power and High-Speed Nonvolatile FPGA by Adjacent Integration of MONOS/Logic and Novel Programming Scheme
Koichiro ZAITSU, Kosuke TATSUMURA, Mari MATSUMOTO, Masato ODA, Shinobu FUJITA, Shinichi YASUDA,
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Abstract(in English) Novel nonvolatile programmable switch for low-power and high-speed FPGA where MONOS flash is adjacently integrated to CMOS logic is demonstrated. The MONOS transistors and low-voltage switching transistors are fabricated close to each other without deteriorating each performance. Furthermore, memory programming scheme is optimized to realize selective writing with no damage in the switching transistors. MONOS-based configuration memory has a half area of conventional SRAM, and it can be placed in each block in FPGA. That enables efficient power gating that offers low-power FPGA operation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) FPGA / MONOS flash memory / Nonvolatile memory / Low power
Paper # SDM2014-75,ICD2014-44
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Conference Date 2014/7/28(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low-Power and High-Speed Nonvolatile FPGA by Adjacent Integration of MONOS/Logic and Novel Programming Scheme
Sub Title (in English)
Keyword(1) FPGA
Keyword(2) MONOS flash memory
Keyword(3) Nonvolatile memory
Keyword(4) Low power
1st Author's Name Koichiro ZAITSU
1st Author's Affiliation Corporate R&D Center, Toshiba Corpotation()
2nd Author's Name Kosuke TATSUMURA
2nd Author's Affiliation Corporate R&D Center, Toshiba Corpotation
3rd Author's Name Mari MATSUMOTO
3rd Author's Affiliation Corporate R&D Center, Toshiba Corpotation
4th Author's Name Masato ODA
4th Author's Affiliation Corporate R&D Center, Toshiba Corpotation
5th Author's Name Shinobu FUJITA
5th Author's Affiliation Corporate R&D Center, Toshiba Corpotation
6th Author's Name Shinichi YASUDA
6th Author's Affiliation Corporate R&D Center, Toshiba Corpotation
Date 2014-08-05
Paper # SDM2014-75,ICD2014-44
Volume (vol) vol.114
Number (no) 175
Page pp.pp.-
#Pages 6
Date of Issue