| Presentation | 2014-08-05 40nm ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU oshisato Yokoyama, Yuichiro Ishii, Hidemitsu Kojima, Atsushi Miyanishi, Yoshiki Tsujihashi, Shinobu Asayama, Kazutoshi Shiba, Koji Tanaka, Tatsuya Fukuda, Koji Nii, Kazumasa Yanagisawa, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A 160 kb SRAM macro with stable operation under widely various temperatures of -40 to 170℃ is implemented in 40 nm embedded flash CMOS technology for automotive microcontroller applications. We finely optimized MOS sizes of the 6T SRAM bitcell with process tuning to enhance the read margin and to reduce leakage power at high temperatures over 125℃. The optimized bitcell improves the static-noise-margin by 40 mV and reduces leakage power to 1/10 of the conventional value. To achieve high quality, we propose rush current suppression circuit when resuming from sleep-mode and a weak-bit test screening circuit. A designed test chip showed a measured V_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SRAM / Standby / leakage power / MCU / 40 nm / 170℃ |
| Paper # | SDM2014-74,ICD2014-43 |
| Date of Issue |
| Conference Information | |
| Committee | ICD |
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| Conference Date | 2014/7/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Integrated Circuits and Devices (ICD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 40nm ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU |
| Sub Title (in English) | |
| Keyword(1) | SRAM |
| Keyword(2) | Standby |
| Keyword(3) | leakage power |
| Keyword(4) | MCU |
| Keyword(5) | 40 nm |
| Keyword(6) | 170℃ |
| 1st Author's Name | oshisato Yokoyama |
| 1st Author's Affiliation | Renesas Electronics() |
| 2nd Author's Name | Yuichiro Ishii |
| 2nd Author's Affiliation | Renesas Electronics |
| 3rd Author's Name | Hidemitsu Kojima |
| 3rd Author's Affiliation | Renesas Electronics |
| 4th Author's Name | Atsushi Miyanishi |
| 4th Author's Affiliation | Renesas Electronics |
| 5th Author's Name | Yoshiki Tsujihashi |
| 5th Author's Affiliation | Renesas Electronics |
| 6th Author's Name | Shinobu Asayama |
| 6th Author's Affiliation | Renesas Electronics |
| 7th Author's Name | Kazutoshi Shiba |
| 7th Author's Affiliation | Renesas Electronics |
| 8th Author's Name | Koji Tanaka |
| 8th Author's Affiliation | Renesas Electronics |
| 9th Author's Name | Tatsuya Fukuda |
| 9th Author's Affiliation | Renesas Electronics |
| 10th Author's Name | Koji Nii |
| 10th Author's Affiliation | Renesas Electronics |
| 11th Author's Name | Kazumasa Yanagisawa |
| 11th Author's Affiliation | Renesas Electronics |
| Date | 2014-08-05 |
| Paper # | SDM2014-74,ICD2014-43 |
| Volume (vol) | vol.114 |
| Number (no) | 175 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |