Presentation 2014-08-05
Development of a Low Standby Power Six-Transistor CMOS SRAM Employing a Single Power Supply
Ryusuke Ito, Nobuaki Kobayashi, Tadayoshi Enomoto,
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Abstract(in English) We developed and applied a new circuit, called the "Self-controllable Voltage Level (SVL)" circuit, not only to expand both "write" and "read" stabilities, but also to achieve a low standby power dissipation (P_) and a high static-noise margin in a single power supply, 90-nm, 2-kbit, six-transistor CMOS SRAM. The SVL circuit can adaptively lower and higher a word-line voltage for "read" and "write" operations, respectively. It can also adaptively lower and higher a memory cell supply voltage for "write" and "hold" operations, and the "read" operation, respectively. The P_ of the developed SRAM is only 0.984μW, namely, 9.57% of that (10.28μW) of the conventional SRAM at a supply voltage (V_
) of 1.0V. A staticnoise margin of the developed SRAM is 0.1839 V and that of the conventional SRAM is 0.343 V at V_
of 1.0 V. A Si area overhead of the SVL circuit is only 1.383 % of the conventional SRAM.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) CMOS / SRAM / static-noise margin / Self-controllable Voltage Level (SVL) circuit / standby power dissipation / leakage current / area overhead
Paper # SDM2014-73,ICD2014-42
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Committee ICD
Conference Date 2014/7/28(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Development of a Low Standby Power Six-Transistor CMOS SRAM Employing a Single Power Supply
Sub Title (in English)
Keyword(1) CMOS
Keyword(2) SRAM
Keyword(3) static-noise margin
Keyword(4) Self-controllable Voltage Level (SVL) circuit
Keyword(5) standby power dissipation
Keyword(6) leakage current
Keyword(7) area overhead
1st Author's Name Ryusuke Ito
1st Author's Affiliation Graduate School of Science and Engineering, Chuo University()
2nd Author's Name Nobuaki Kobayashi
2nd Author's Affiliation Graduate School of Science and Engineering, Chuo University
3rd Author's Name Tadayoshi Enomoto
3rd Author's Affiliation Graduate School of Science and Engineering, Chuo University
Date 2014-08-05
Paper # SDM2014-73,ICD2014-42
Volume (vol) vol.114
Number (no) 175
Page pp.pp.-
#Pages 6
Date of Issue