Presentation | 2014-08-05 Development of a Low Standby Power Six-Transistor CMOS SRAM Employing a Single Power Supply Ryusuke Ito, Nobuaki Kobayashi, Tadayoshi Enomoto, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We developed and applied a new circuit, called the "Self-controllable Voltage Level (SVL)" circuit, not only to expand both "write" and "read" stabilities, but also to achieve a low standby power dissipation (P_ |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | CMOS / SRAM / static-noise margin / Self-controllable Voltage Level (SVL) circuit / standby power dissipation / leakage current / area overhead |
Paper # | SDM2014-73,ICD2014-42 |
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Conference Information | |
Committee | ICD |
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Conference Date | 2014/7/28(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Integrated Circuits and Devices (ICD) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Development of a Low Standby Power Six-Transistor CMOS SRAM Employing a Single Power Supply |
Sub Title (in English) | |
Keyword(1) | CMOS |
Keyword(2) | SRAM |
Keyword(3) | static-noise margin |
Keyword(4) | Self-controllable Voltage Level (SVL) circuit |
Keyword(5) | standby power dissipation |
Keyword(6) | leakage current |
Keyword(7) | area overhead |
1st Author's Name | Ryusuke Ito |
1st Author's Affiliation | Graduate School of Science and Engineering, Chuo University() |
2nd Author's Name | Nobuaki Kobayashi |
2nd Author's Affiliation | Graduate School of Science and Engineering, Chuo University |
3rd Author's Name | Tadayoshi Enomoto |
3rd Author's Affiliation | Graduate School of Science and Engineering, Chuo University |
Date | 2014-08-05 |
Paper # | SDM2014-73,ICD2014-42 |
Volume (vol) | vol.114 |
Number (no) | 175 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |