Presentation	2014-08-05 Statistical Analysis of Minimum Operation Voltage (V_) in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells Tomoko MIZUTANI, Yoshiki YAMAMOTO, Hideki MAKIYAMA, Tomohiro YAMASHITA, Hidekazu ODA, Shiro KAMOHARA, Nobuyuki SUGII, Toshiro HIRAMOTO,
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Abstract(in English)	The minimum operation voltage (V_) of fully depleted (FD) silicon-on-thin-BOX (SOTB) SRAM cells are measured and statistically analyzed. It is newly found that V_ deviates from a normal distribution and follows a log-normal distribution. Furthermore, it is found that the behaviors of the worst V_ are different from the median V_ or static noise margin (SNM), indicating that cell stability of high density SRAM must be judged by the worst V_.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Variability / Minimum Operation Voltage / FD SOI
Paper #	SDM2014-72,ICD2014-41
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Committee	ICD
Conference Date	2014/7/28(1days)
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Paper Information
Registration To	Integrated Circuits and Devices (ICD)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	Statistical Analysis of Minimum Operation Voltage (V_) in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells
Sub Title (in English)
Keyword(1)	Variability
Keyword(2)	Minimum Operation Voltage
Keyword(3)	FD SOI
1st Author's Name	Tomoko MIZUTANI
1st Author's Affiliation	Institute of Industrial Science, University of Tokyo()
2nd Author's Name	Yoshiki YAMAMOTO
2nd Author's Affiliation	Low-power Electronics Association & Project(LEAP)
3rd Author's Name	Hideki MAKIYAMA
3rd Author's Affiliation	Low-power Electronics Association & Project(LEAP)
4th Author's Name	Tomohiro YAMASHITA
4th Author's Affiliation	Low-power Electronics Association & Project(LEAP)
5th Author's Name	Hidekazu ODA
5th Author's Affiliation	Low-power Electronics Association & Project(LEAP)
6th Author's Name	Shiro KAMOHARA
6th Author's Affiliation	Low-power Electronics Association & Project(LEAP)
7th Author's Name	Nobuyuki SUGII
7th Author's Affiliation	Low-power Electronics Association & Project(LEAP)
8th Author's Name	Toshiro HIRAMOTO
8th Author's Affiliation	Institute of Industrial Science, University of Tokyo
Date	2014-08-05
Paper #	SDM2014-72,ICD2014-41
Volume (vol)	vol.114
Number (no)	175
Page	pp.pp.-
#Pages	4
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