Presentation 2014-08-04
A 32-bit CPU with Zero Standby Power and 1.5-clock Backup/2.5-clock Restore Achieved by Utilizing a 180-nm Crystalline Oxide Semiconductor Transistor
Jun KOYAMA, Atsuo ISOBE, Hikaru TAMURA, Kiyoshi KATO, Takuro OHMARU, Wataru UESUGI, Takahiko ISHIZU, Kazuaki OHSHIMA, Yasutaka SUZUKI, Naoaki TSUTSUI, Tomoaki ATSUMI, Yutaka SHIONOIRI, Yukio MAEHASHI, Masahiro FUJITA, Shunpei YAMAZAKI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A flip-flop achieving high-speed backup utilizing a Si transistor and long-term retention with zero standby power by means of a transistor of a crystalline oxide semiconductor, especially a c-axis aligned crystalline In-Ga-Zn oxide semiconductor, featuring extremely low off-state current is proposed. Using the flip-flop, a 32-bit processor has been fabricated with 350-nm Si CMOS/180-nm CAAC oxide semiconductor hybrid technology, and demonstrated data backup and power shutdown in 1.5 clock cycles (100 ns at 15 MHz) at a low power of 1.77 nJ, data recovery in 2.5 clock cycles (167 ns at 15 MHz), and data retention with zero standby power for at least a day. According to simulation results, data backup and power shutdown in 1.5 clock cycles, data recovery in 2.5 clock cycles, and long-term retention can also be achieved with 45-nm Si CMOS/180-nm CAAC oxide semiconductor hybrid technology as in a fabricated test chip.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Crystalline Oxide Semiconductor / CAAC-IGZO / Power gating / Zero standby power / Two-step backup flip-flop
Paper # SDM2014-70,ICD2014-39
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Conference Date 2014/7/28(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A 32-bit CPU with Zero Standby Power and 1.5-clock Backup/2.5-clock Restore Achieved by Utilizing a 180-nm Crystalline Oxide Semiconductor Transistor
Sub Title (in English)
Keyword(1) Crystalline Oxide Semiconductor
Keyword(2) CAAC-IGZO
Keyword(3) Power gating
Keyword(4) Zero standby power
Keyword(5) Two-step backup flip-flop
1st Author's Name Jun KOYAMA
1st Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.()
2nd Author's Name Atsuo ISOBE
2nd Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
3rd Author's Name Hikaru TAMURA
3rd Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
4th Author's Name Kiyoshi KATO
4th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
5th Author's Name Takuro OHMARU
5th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
6th Author's Name Wataru UESUGI
6th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
7th Author's Name Takahiko ISHIZU
7th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
8th Author's Name Kazuaki OHSHIMA
8th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
9th Author's Name Yasutaka SUZUKI
9th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
10th Author's Name Naoaki TSUTSUI
10th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
11th Author's Name Tomoaki ATSUMI
11th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
12th Author's Name Yutaka SHIONOIRI
12th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
13th Author's Name Yukio MAEHASHI
13th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
14th Author's Name Masahiro FUJITA
14th Author's Affiliation VLSI Design and Education Center(VDEC), The University of Tokyo
15th Author's Name Shunpei YAMAZAKI
15th Author's Affiliation Semiconductor Energy Laboratory Co., Ltd.
Date 2014-08-04
Paper # SDM2014-70,ICD2014-39
Volume (vol) vol.114
Number (no) 175
Page pp.pp.-
#Pages 6
Date of Issue