Presentation 2014-08-04
Testability Improvement for 12.8 GB/s Wide IO DRAM Controller by Small Area Pre-bonding TSV Tests and a 1GHz Sampled Fully Digital Noise Monitor
Takao Nomura, Ryo Mori, Koji Takayanagi, Toshihiko Ochiai, Kazuki Fukuoka, Tsuyoshi Kida, Koji Nii, Sadayuki Morita,
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Abstract(in English) We developed a Wide IO DRAM controller chip with Through Silicon Via (TSV) technology. Test circuitry is embedded in the micro-IOs placed between the fine pitch TSVs which can reject TSV connectivity failures prior to stacking process. In order to reduce Vmin degradation induced by 512 DQs simultaneously switching noise, we introduce a package-board impedance optimization method utilizing a full digital noise monitor. We achieved 12.8 GB/s operation, while IO power was reduced by 89% compared to LPDDR3.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) TSV / Wide IO DRAM / pre-bonding test / fully digital noise monitor / simultaneous switching noise / impedance optimization
Paper # SDM2014-65,ICD2014-34
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Committee ICD
Conference Date 2014/7/28(1days)
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Registration To Integrated Circuits and Devices (ICD)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Testability Improvement for 12.8 GB/s Wide IO DRAM Controller by Small Area Pre-bonding TSV Tests and a 1GHz Sampled Fully Digital Noise Monitor
Sub Title (in English)
Keyword(1) TSV
Keyword(2) Wide IO DRAM
Keyword(3) pre-bonding test
Keyword(4) fully digital noise monitor
Keyword(5) simultaneous switching noise
Keyword(6) impedance optimization
1st Author's Name Takao Nomura
1st Author's Affiliation Renesas Electronics Corporation()
2nd Author's Name Ryo Mori
2nd Author's Affiliation Renesas Electronics Corporation
3rd Author's Name Koji Takayanagi
3rd Author's Affiliation Renesas Electronics Corporation
4th Author's Name Toshihiko Ochiai
4th Author's Affiliation Renesas Electronics Corporation
5th Author's Name Kazuki Fukuoka
5th Author's Affiliation Renesas Electronics Corporation
6th Author's Name Tsuyoshi Kida
6th Author's Affiliation Renesas Electronics Corporation
7th Author's Name Koji Nii
7th Author's Affiliation Renesas Electronics Corporation
8th Author's Name Sadayuki Morita
8th Author's Affiliation Renesas Electronics Corporation
Date 2014-08-04
Paper # SDM2014-65,ICD2014-34
Volume (vol) vol.114
Number (no) 175
Page pp.pp.-
#Pages 5
Date of Issue