| Presentation | 2014-08-04 Research progress in steep slope devices and technologies to enhance ON current in TFETs Takahiro MORI, Yukinori MORITA, Shinji MIGITA, Wataru MIZUBAYASHI, Koichi FUKUDA, Noriyuki MIYATA, Tetsuji YASUDA, Meishoku MASAHARA, Hiroyuki OTA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Steep slope devices (SSDs) have attracted because of the increase demand for low-power devices. This paper reviews recent research progress in SSDs. Tunnel field-effect transistor (TFET), which is the front runner in SSDs, has a problem in their ON current. There are two ways to enhance the ON current; one is by enhancing electric-field at the junction, and another is by realizing high tunneling probability. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Steep slope devices / tunnel field-effect transistor / Synthetic electric field / isoelectronic trap |
| Paper # | SDM2014-67,ICD2014-36 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2014/7/28(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Research progress in steep slope devices and technologies to enhance ON current in TFETs |
| Sub Title (in English) | |
| Keyword(1) | Steep slope devices |
| Keyword(2) | tunnel field-effect transistor |
| Keyword(3) | Synthetic electric field |
| Keyword(4) | isoelectronic trap |
| 1st Author's Name | Takahiro MORI |
| 1st Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology(AIST)() |
| 2nd Author's Name | Yukinori MORITA |
| 2nd Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology(AIST) |
| 3rd Author's Name | Shinji MIGITA |
| 3rd Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology(AIST) |
| 4th Author's Name | Wataru MIZUBAYASHI |
| 4th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology(AIST) |
| 5th Author's Name | Koichi FUKUDA |
| 5th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology(AIST) |
| 6th Author's Name | Noriyuki MIYATA |
| 6th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology(AIST) |
| 7th Author's Name | Tetsuji YASUDA |
| 7th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology(AIST) |
| 8th Author's Name | Meishoku MASAHARA |
| 8th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology(AIST) |
| 9th Author's Name | Hiroyuki OTA |
| 9th Author's Affiliation | Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology(AIST) |
| Date | 2014-08-04 |
| Paper # | SDM2014-67,ICD2014-36 |
| Volume (vol) | vol.114 |
| Number (no) | 174 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |