Presentation 2014-08-21
Fabrication and High-Temperature Operation of InAs/GaAs Quantum Dot Lasers on Silicon by Wafer Bonding
Katsuaki TANABE, Yasuhiko ARAKAWA,
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Abstract(in English) We are developing high-performance on-chip light sources utilizing semiconductor quantum dots towards the realization of silicon photonics-electronics integrated circuits. In our present work, we have observed over-100℃ lasing temperatures for 1.3 μm InAs/GaAs quantum dot lasers on Si substrates fabricated by wafer bonding, by an incorporation of p-type doping in the InAs/GaAs quantum-dot core layers. The characteristics temperature T_0 has been found as high as infinity and 180 K around room temperature and 100℃, respectively. We have furthermore succeeded in the fabrication and over-100℃ operation of InAs/GaAs quantum dot lasers on Si waveguide structures.
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Keyword(in English) Semiconductor Laser / Quantum Dot / Wafer Bonding / Silicon Photonics
Paper # R2014-32,EMD2014-37,CPM2014-52,OPE2014-62,LQE2014-36
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Committee LQE
Conference Date 2014/8/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication and High-Temperature Operation of InAs/GaAs Quantum Dot Lasers on Silicon by Wafer Bonding
Sub Title (in English)
Keyword(1) Semiconductor Laser
Keyword(2) Quantum Dot
Keyword(3) Wafer Bonding
Keyword(4) Silicon Photonics
1st Author's Name Katsuaki TANABE
1st Author's Affiliation Institute for Nano Quantum Information Electronics, University of Tokyo()
2nd Author's Name Yasuhiko ARAKAWA
2nd Author's Affiliation Institute for Nano Quantum Information Electronics, University of Tokyo:Institute of Industrial Science, University of Tokyo
Date 2014-08-21
Paper # R2014-32,EMD2014-37,CPM2014-52,OPE2014-62,LQE2014-36
Volume (vol) vol.114
Number (no) 187
Page pp.pp.-
#Pages 4
Date of Issue