| Presentation | 2014-08-21 Integrated waveguide type membrane DFB lasers by BCB bonding on Si substrate Daisuke INOUE, Jieun LEE, Takuo HIRATANI, Yuki ATSUJI, Tomohiro AMEMIYA, Nobuhiko NISHIYAMA, Shigehisa ARAI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | On-chip optical interconnection technology which can replace copper electrical global wiring to optical wiring is expected as a promising solution for increasing RC delay and heating in large scale integrated circuit. We have proposed semiconductor membrane distributed-feedback laser which satisfies requirements for the light source of the on-chip optical interconnection. In this paper, room-temperature continuous-wave (RT-CW) operation of membrane laser bonded on Si subst. A threshold current of 2.5 mA and the differential quantum efficiency from the front facet of 22% were obtained for a Fabry-Perot cavity laser with the cavity length of 350 μm and the stripe width of 0.7 μm. From the cavity length dependence of the differential quantum efficiency, we obtained an internal quantum efficiency of 75% and a waveguide loss of 42 cm^<-1>. Furthermore, for the integration of membrane laser with waveguide, we realized membrane distributed-feedback lasers integrated with butt-jointed passive waveguide bonded on Si substrate. As a results, a RT-CW operation of the waveguide integrated type membrane DFB laser with a threshold current of 250 μA for the cavity length of 50 μm and the stripe width of 0.8 μm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Semiconductor membrane laser / Distributed-feedback laser / Optical interconnection / BCB bonding / Butt-joint regrowth |
| Paper # | R2014-26,EMD2014-31,CPM2014-46,OPE2014-56,LQE2014-30 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2014/8/14(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Integrated waveguide type membrane DFB lasers by BCB bonding on Si substrate |
| Sub Title (in English) | |
| Keyword(1) | Semiconductor membrane laser |
| Keyword(2) | Distributed-feedback laser |
| Keyword(3) | Optical interconnection |
| Keyword(4) | BCB bonding |
| Keyword(5) | Butt-joint regrowth |
| 1st Author's Name | Daisuke INOUE |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | Jieun LEE |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | Takuo HIRATANI |
| 3rd Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 4th Author's Name | Yuki ATSUJI |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 5th Author's Name | Tomohiro AMEMIYA |
| 5th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
| 6th Author's Name | Nobuhiko NISHIYAMA |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology |
| 7th Author's Name | Shigehisa ARAI |
| 7th Author's Affiliation | Department of Electrical and Electronic Engineering, Tokyo Institute of Technology:Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
| Date | 2014-08-21 |
| Paper # | R2014-26,EMD2014-31,CPM2014-46,OPE2014-56,LQE2014-30 |
| Volume (vol) | vol.114 |
| Number (no) | 187 |
| Page | pp.pp.- |
| #Pages | 6 |
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