Presentation 2014-08-21
Lateral Current Injection DFB Laser on Si/SiO_2 Substrate
S. MATSUO, T. Fujii, K. Hasebe, K. TAKEDA, T. SATO, T. KAKITSUKA,
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Abstract(in English) Membrane lasers with buried heterostructure are expected to obtain extremely small operating energy because of the enhancement of optical and carrier confinements. Therefore, these lasers are suitable for use the light sources in datacom and computercom applications. In this context, we have developed DFB laser on SiO_2/Si substrate for datacom application by combining direct bonding and regrowth techniques. The DFB laser exhibits a threshold current of 1.8 mA and clear eye-opening with 25.8-Gbit/s NRZ signal when the bias current is 8.0 mA.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) DFB laser / laser on Si / lateral pin junction
Paper # R2014-25,EMD2014-30,CPM2014-45,OPE2014-55,LQE2014-29
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Committee LQE
Conference Date 2014/8/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Lateral Current Injection DFB Laser on Si/SiO_2 Substrate
Sub Title (in English)
Keyword(1) DFB laser
Keyword(2) laser on Si
Keyword(3) lateral pin junction
1st Author's Name S. MATSUO
1st Author's Affiliation Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation()
2nd Author's Name T. Fujii
2nd Author's Affiliation Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation
3rd Author's Name K. Hasebe
3rd Author's Affiliation Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation
4th Author's Name K. TAKEDA
4th Author's Affiliation Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation
5th Author's Name T. SATO
5th Author's Affiliation Nanophotonics Center, NTT Corporation
6th Author's Name T. KAKITSUKA
6th Author's Affiliation Nanophotonics Center, NTT Corporation:NTT Device Technology Laboratories, NTT Corporation
Date 2014-08-21
Paper # R2014-25,EMD2014-30,CPM2014-45,OPE2014-55,LQE2014-29
Volume (vol) vol.114
Number (no) 187
Page pp.pp.-
#Pages 4
Date of Issue