Presentation 2014-07-11
Fabrication of gate controlled selective ionic transport nanofluidic channel for local stimulation of cell
Kazuhiro TAKAHASHI, Junpei NISHIMOTO, Yoshinaga UEMURA, Kazuya ATSUMI, Toshiaki HATTORI, Masato FUTAGAWA, Koichi OKUMURA, Makoto ISHIDA, Kazuaki SAWADA,
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Abstract(in English) This paper presents a nanofluidic channel with Al gate electrodes developed by conventional silicon planar process, which can control ionic current through the nanochannel by the gate electrode voltages. A 40nm nanochannel with Al gate electrode was developed by removing sacrificial polysilicon using XeF_2 etching. When the 10^<-4> M KCl solution was added to the inlet, we observed ionic current change of 6 nA. The K ion concentration at the outlet in an hour was also measured by an atomic absorption spectrometer, and the concentration was increased to 3.8μM. The ionic current decreased by applying to the gate electrode at positive gate bias and increased at negative gate bias. The possibility of the ion stimulation device was indicated by controlling ion transportation using nano fluidic channel.
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Keyword(in English) Nanochannel / electrical double layer / silicon planar process / selective ionic transport
Paper # ED2014-50
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Committee ED
Conference Date 2014/7/3(1days)
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Registration To Electron Devices (ED)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of gate controlled selective ionic transport nanofluidic channel for local stimulation of cell
Sub Title (in English)
Keyword(1) Nanochannel
Keyword(2) electrical double layer
Keyword(3) silicon planar process
Keyword(4) selective ionic transport
1st Author's Name Kazuhiro TAKAHASHI
1st Author's Affiliation Toyohashi University of Technology()
2nd Author's Name Junpei NISHIMOTO
2nd Author's Affiliation Toyohashi University of Technology
3rd Author's Name Yoshinaga UEMURA
3rd Author's Affiliation Toyohashi University of Technology
4th Author's Name Kazuya ATSUMI
4th Author's Affiliation Toyohashi University of Technology
5th Author's Name Toshiaki HATTORI
5th Author's Affiliation Toyohashi University of Technology
6th Author's Name Masato FUTAGAWA
6th Author's Affiliation Toyohashi University of Technology
7th Author's Name Koichi OKUMURA
7th Author's Affiliation Toyohashi University of Technology
8th Author's Name Makoto ISHIDA
8th Author's Affiliation Toyohashi University of Technology:EIIRIS, Toyohashi University of Technology
9th Author's Name Kazuaki SAWADA
9th Author's Affiliation Toyohashi University of Technology:EIIRIS, Toyohashi University of Technology
Date 2014-07-11
Paper # ED2014-50
Volume (vol) vol.114
Number (no) 133
Page pp.pp.-
#Pages 4
Date of Issue