Presentation | 2014-07-11 Fabrication of gate controlled selective ionic transport nanofluidic channel for local stimulation of cell Kazuhiro TAKAHASHI, Junpei NISHIMOTO, Yoshinaga UEMURA, Kazuya ATSUMI, Toshiaki HATTORI, Masato FUTAGAWA, Koichi OKUMURA, Makoto ISHIDA, Kazuaki SAWADA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | This paper presents a nanofluidic channel with Al gate electrodes developed by conventional silicon planar process, which can control ionic current through the nanochannel by the gate electrode voltages. A 40nm nanochannel with Al gate electrode was developed by removing sacrificial polysilicon using XeF_2 etching. When the 10^<-4> M KCl solution was added to the inlet, we observed ionic current change of 6 nA. The K ion concentration at the outlet in an hour was also measured by an atomic absorption spectrometer, and the concentration was increased to 3.8μM. The ionic current decreased by applying to the gate electrode at positive gate bias and increased at negative gate bias. The possibility of the ion stimulation device was indicated by controlling ion transportation using nano fluidic channel. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Nanochannel / electrical double layer / silicon planar process / selective ionic transport |
Paper # | ED2014-50 |
Date of Issue |
Conference Information | |
Committee | ED |
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Conference Date | 2014/7/3(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Electron Devices (ED) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of gate controlled selective ionic transport nanofluidic channel for local stimulation of cell |
Sub Title (in English) | |
Keyword(1) | Nanochannel |
Keyword(2) | electrical double layer |
Keyword(3) | silicon planar process |
Keyword(4) | selective ionic transport |
1st Author's Name | Kazuhiro TAKAHASHI |
1st Author's Affiliation | Toyohashi University of Technology() |
2nd Author's Name | Junpei NISHIMOTO |
2nd Author's Affiliation | Toyohashi University of Technology |
3rd Author's Name | Yoshinaga UEMURA |
3rd Author's Affiliation | Toyohashi University of Technology |
4th Author's Name | Kazuya ATSUMI |
4th Author's Affiliation | Toyohashi University of Technology |
5th Author's Name | Toshiaki HATTORI |
5th Author's Affiliation | Toyohashi University of Technology |
6th Author's Name | Masato FUTAGAWA |
6th Author's Affiliation | Toyohashi University of Technology |
7th Author's Name | Koichi OKUMURA |
7th Author's Affiliation | Toyohashi University of Technology |
8th Author's Name | Makoto ISHIDA |
8th Author's Affiliation | Toyohashi University of Technology:EIIRIS, Toyohashi University of Technology |
9th Author's Name | Kazuaki SAWADA |
9th Author's Affiliation | Toyohashi University of Technology:EIIRIS, Toyohashi University of Technology |
Date | 2014-07-11 |
Paper # | ED2014-50 |
Volume (vol) | vol.114 |
Number (no) | 133 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |