Presentation 2014-08-22
Opto-electronic hybrid integrated chip packaging technology for silicon photonic platform using gold-stud bump bonding
Mitsuo USUI, Kotaro TAKEDA, Hirooki HIRATA, Hiroshi FUKUDA, Tai TSUCHIZAWA, Hidetaka NISHI, Rai KOU, Tatsuro HIRAKI, Kentaro HONDA, Masashi NOGAWA, Koji YAMADA, Tsuyoshi YAMAMOTO,
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Abstract(in English) We propose a new solder-free and low-temperature (200℃ or less) flip-chip integration technology for silicon photonic platforms. Gold (Au) stud bumps are arranged facing each other on a substrate and a chip. Plastic deformation when the bumps are heated and pressed achieves Au-Au bonding. We measured mechanical and electrical characteristics (bond strength, electrical resistance, and high-frequency characteristics) of test samples fabricated by using this technology and confirmed good performance. The bonding strength exceeds the strength requirement of MIL-STD-883J, Method 2019. The electrical resistance at the bump connection is 2.3 mΩ/bump, which is low enough. The frequency response (S21) is flat and return loss (S11) is larger than 20 dB in the frequency range of up to 40 GHz. Further, we fabricated a 4-ch-WDM receiver using this technology and confirmed that it has good performance at 25-Gbit/s operation.
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Keyword(in English) Si photonics / flip-chip bonding / gold (Au) stud bump / Au-Au bonding / plastic deformation / packaging technology
Paper # R2014-45,EMD2014-50,CPM2014-65,OPE2014-75,LQE2014-49
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Conference Information
Committee CPM
Conference Date 2014/8/14(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Opto-electronic hybrid integrated chip packaging technology for silicon photonic platform using gold-stud bump bonding
Sub Title (in English)
Keyword(1) Si photonics
Keyword(2) flip-chip bonding
Keyword(3) gold (Au) stud bump
Keyword(4) Au-Au bonding
Keyword(5) plastic deformation
Keyword(6) packaging technology
1st Author's Name Mitsuo USUI
1st Author's Affiliation NTT Device Innovation Center, NTT Corporation()
2nd Author's Name Kotaro TAKEDA
2nd Author's Affiliation NTT Device Technology Laboratories, NTT Corporation
3rd Author's Name Hirooki HIRATA
3rd Author's Affiliation NTT Device Innovation Center, NTT Corporation
4th Author's Name Hiroshi FUKUDA
4th Author's Affiliation NTT Device Innovation Center, NTT Corporation
5th Author's Name Tai TSUCHIZAWA
5th Author's Affiliation NTT Device Innovation Center, NTT Corporation
6th Author's Name Hidetaka NISHI
6th Author's Affiliation NTT Device Technology Laboratories, NTT Corporation
7th Author's Name Rai KOU
7th Author's Affiliation NTT Device Technology Laboratories, NTT Corporation
8th Author's Name Tatsuro HIRAKI
8th Author's Affiliation NTT Device Technology Laboratories, NTT Corporation
9th Author's Name Kentaro HONDA
9th Author's Affiliation NTT Device Technology Laboratories, NTT Corporation
10th Author's Name Masashi NOGAWA
10th Author's Affiliation NTT Device Innovation Center, NTT Corporation
11th Author's Name Koji YAMADA
11th Author's Affiliation NTT Device Technology Laboratories, NTT Corporation
12th Author's Name Tsuyoshi YAMAMOTO
12th Author's Affiliation NTT Device Technology Laboratories, NTT Corporation
Date 2014-08-22
Paper # R2014-45,EMD2014-50,CPM2014-65,OPE2014-75,LQE2014-49
Volume (vol) vol.114
Number (no) 185
Page pp.pp.-
#Pages 6
Date of Issue