Presentation | 2014-08-21 Fabrication and High-Temperature Operation of InAs/GaAs Quantum Dot Lasers on Silicon by Wafer Bonding Katsuaki TANABE, Yasuhiko ARAKAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We are developing high-performance on-chip light sources utilizing semiconductor quantum dots towards the realization of silicon photonics-electronics integrated circuits. In our present work, we have observed over-100℃ lasing temperatures for 1.3 μm InAs/GaAs quantum dot lasers on Si substrates fabricated by wafer bonding, by an incorporation of p-type doping in the InAs/GaAs quantum-dot core layers. The characteristics temperature T_0 has been found as high as infinity and 180 K around room temperature and 100℃, respectively. We have furthermore succeeded in the fabrication and over-100℃ operation of InAs/GaAs quantum dot lasers on Si waveguide structures. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Semiconductor Laser / Quantum Dot / Wafer Bonding / Silicon Photonics |
Paper # | R2014-32,EMD2014-37,CPM2014-52,OPE2014-62,LQE2014-36 |
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Committee | CPM |
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Conference Date | 2014/8/14(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication and High-Temperature Operation of InAs/GaAs Quantum Dot Lasers on Silicon by Wafer Bonding |
Sub Title (in English) | |
Keyword(1) | Semiconductor Laser |
Keyword(2) | Quantum Dot |
Keyword(3) | Wafer Bonding |
Keyword(4) | Silicon Photonics |
1st Author's Name | Katsuaki TANABE |
1st Author's Affiliation | Institute for Nano Quantum Information Electronics, University of Tokyo() |
2nd Author's Name | Yasuhiko ARAKAWA |
2nd Author's Affiliation | Institute for Nano Quantum Information Electronics, University of Tokyo:Institute of Industrial Science, University of Tokyo |
Date | 2014-08-21 |
Paper # | R2014-32,EMD2014-37,CPM2014-52,OPE2014-62,LQE2014-36 |
Volume (vol) | vol.114 |
Number (no) | 185 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |