Presentation 2014-06-20
Low Driving Voltage Electro-absorption Modulator Laterally Integrated with VCSEL
Hamed DALIR, Yuta Takahashi, Fumio KOYAMA,
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Abstract(in English) In this report, we present an ultra-compact (8μm long) electro-absorption modulator which is laterally integrated with a 980nm InGaAs VCSEL incorporating a bow-tie-shape oxide aperture. We demonstrate a low driving voltage operation below 400mV_ for a dynamic extinction ratio of 6dB and large signal modulation up to 25Gbps. The static extinction ratio of over 6dB can be obtained by applying an extremely low voltage of -200mV.
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Keyword(in English) Vertical cavity surface emitting lasers / Waveguide modulators / Optical interconnect
Paper # OPE2014-19,LQE2014-24
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Conference Information
Committee LQE
Conference Date 2014/6/13(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low Driving Voltage Electro-absorption Modulator Laterally Integrated with VCSEL
Sub Title (in English)
Keyword(1) Vertical cavity surface emitting lasers
Keyword(2) Waveguide modulators
Keyword(3) Optical interconnect
1st Author's Name Hamed DALIR
1st Author's Affiliation P&I Lab., Tokyo Institute of Technology()
2nd Author's Name Yuta Takahashi
2nd Author's Affiliation P&I Lab., Tokyo Institute of Technology
3rd Author's Name Fumio KOYAMA
3rd Author's Affiliation P&I Lab., Tokyo Institute of Technology
Date 2014-06-20
Paper # OPE2014-19,LQE2014-24
Volume (vol) vol.114
Number (no) 98
Page pp.pp.-
#Pages 4
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