Presentation 2014-05-23
Recombination emission of the X-point electron and the F-point hole in the AlGaAs/AlAs type II quantum wells
Takatoshi NOMURA, Satoshi SHIMOMURA, Tadashi FUKUZAWA, Sho SHIRAKATA, Hisao KONDO,
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Abstract(in English) Multi quantum wells (MQWs) of AlGaAs/AlAs were grown on (100) GaAs substrates and 23.8° off (100) GaAs substrates towards (111) by molecular beam epitaxy. In the system, X-point electrons are confined in AlAs layers and Γ-point holes are confined AlGaAs layers. The MQWs on 23.8° off substrates have flat interfaces and show strong photoluminescence. The dependence of photoluminescence peak wavelength on Al content of AlGaAs layers indicates that the photoluminescence are attributed to the recombination of X-point electrons are confined in AlAs layers and Γ-point holes are confined AlGaAs layer. Quantum size effects owing to reduction of AlAs layer thickness are given and compared to the result obtained by the quantum energy level and wave function calculation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlGaAs/AlAs multi-quantum well / Γ-point hole / X-point electron
Paper # LQE2014-14
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Conference Information
Committee LQE
Conference Date 2014/5/15(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Recombination emission of the X-point electron and the F-point hole in the AlGaAs/AlAs type II quantum wells
Sub Title (in English)
Keyword(1) AlGaAs/AlAs multi-quantum well
Keyword(2) Γ-point hole
Keyword(3) X-point electron
1st Author's Name Takatoshi NOMURA
1st Author's Affiliation Graduate School of Science & Engineering, Ehime University()
2nd Author's Name Satoshi SHIMOMURA
2nd Author's Affiliation Graduate School of Science & Engineering, Ehime University
3rd Author's Name Tadashi FUKUZAWA
3rd Author's Affiliation Hosei University
4th Author's Name Sho SHIRAKATA
4th Author's Affiliation Graduate School of Science & Engineering, Ehime University
5th Author's Name Hisao KONDO
5th Author's Affiliation Graduate School of Science & Engineering, Ehime University
Date 2014-05-23
Paper # LQE2014-14
Volume (vol) vol.114
Number (no) 46
Page pp.pp.-
#Pages 4
Date of Issue