Presentation 2014-05-22
High-speed Response of SOI Lateral PIN-type Photodiode Fabricated bv CMOS Compatible Process
Gen LI, Kazuaki MAEKITA, Takeo MARUYAMA, Koichi IIYAMA,
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Abstract(in English) We fabricated a lateral PIN-type Si photodetector on silicon-on-insulator (SOI) substrate by a complementarymetal-oxide-semiconductor (CMOS) compatible process. The devices were measured at the wavelength of 0.8 μm region. Receiving area is 23 x 23 μm^2, and electrode spacing is 3 μm with electrode width of 1 μm. The intrinsic region of the PIN-type Si photodetector is 1 μm. The dark current of 0.1 nA was obtained at the bias voltage of 10 V. The responsivity of 6.2 A/W, and high frequency response of 6.5 GHz was obtained at the bias voltage of -10 V at the wavelength of 850 nm. The maximum bandwidth of 8 GHz was obtained at the bias voltage of 30 V.
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Keyword(in English) CMOS compatible process / PIN-type Si photodetector / Silicon on insulator / Silicon photonics
Paper # LQE2014-1
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Committee LQE
Conference Date 2014/5/15(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-speed Response of SOI Lateral PIN-type Photodiode Fabricated bv CMOS Compatible Process
Sub Title (in English)
Keyword(1) CMOS compatible process
Keyword(2) PIN-type Si photodetector
Keyword(3) Silicon on insulator
Keyword(4) Silicon photonics
1st Author's Name Gen LI
1st Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University()
2nd Author's Name Kazuaki MAEKITA
2nd Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
3rd Author's Name Takeo MARUYAMA
3rd Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
4th Author's Name Koichi IIYAMA
4th Author's Affiliation Graduate School of Natural Science and Technology, Kanazawa University
Date 2014-05-22
Paper # LQE2014-1
Volume (vol) vol.114
Number (no) 46
Page pp.pp.-
#Pages 4
Date of Issue